MAX4959/MAX4960 High-Voltage OVP with Battery Switchover General Description Features The MAX4959/MAX4960 overvoltage protection con- Overvoltage Protection Up to +28V trollers protect low-voltage systems against high-volt- 2.5% Accurate Externally Adjustable age faults of up to +28V. When the input voltage OVLO/UVLO Thresholds exceeds the overvoltage lockout (OVLO) threshold, these devices turn off an external pFET to prevent dam- Battery Switchover pFET Control age to the protected components. The undervoltage Protection Against Incorrect Power Adapter lockout (UVLO) threshold holds the external pFET off until the input voltage rises to the correct level. An addi- Low (100A Typ) Supply Current tional safety feature latches off the pFET when an incor- 25ms Input Debounce Timer rect low-power adapter is plugged in. 25ms Blanking Time The MAX4959/MAX4960 control an external battery switchover pFET (P2) (see Figures 4 and 6) that switches 10-Pin (2mm x 2mm) DFN Packages in the battery when the AC adapter is unplugged. The undervoltage and overvoltage trip levels can be adjusted with external resistors. Ordering Information The input is protected against 15kV HBM ESD when bypassed with a 1F ceramic capacitor to ground. All PIN - TOP PART TEMP RANGE devices are available in a small 10-pin (2mm x 2mm) PAC K A G E MARK DFN and are specified for operation over the extend- MAX4959ELB+ -40C to +85C 10 DFN AAO ed -40C to +85C temperature range. MAX4960ELB+ -40C to +85C 10 DFN AAP Applications +Denotes a lead-free package. Notebooks Laptops Camcorders Ultra-Mobile PCs Pin Configuration TOP VIEW 10 9 8 76 MAX4959 MAX4960 + 12 3 45 DFN ( ) MAX4960 ONLY. Typical Operating Circuits appear at end of data sheet. For pricing, delivery, and ordering information, please contact Maxim Direct 19-0874 Rev 1 7/14 at 1-888-629-4642, or visit Maxims website at www.maximintegrated.com. GATE1 GATE2 N.C. N.C. (SOURCE1) GND IN UVS CB V OVS DDMAX4959/MAX4960 High-Voltage OVP with Battery Switchover ABSOLUTE MAXIMUM RATINGS IN, SOURCE1, GATE1, GATE2, to GND ................-0.3V to +30V Operating Temperature Range ...........................-40C to +85C V to GND..............................................................-0.3V to +6V Junction Temperature......................................................+150C DD UVS, OVS, CB to GND .............................................-0.3V to +6V Storage Temperature Range .............................-65C to +150C Continuous Power Dissipation (T = +70C) Lead Temperature (soldering, 10s) .................................+300C A 10-pin DFN (derate 5.0mW/C above +70C) ...........403mW Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V = +19V, T = -40C to +85C, unless otherwise noted, C = 100nF. Typical values are at T = +25C.) (Note 1) IN A VDD A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS IN Input Voltage Range V 428V IN Overvoltage Adjustable Trip OVLO (Note 2) 6 28 V Range Overvoltage Comp Reference OV V rising edge 1.18 1.228 1.276 V REF IN OVS Input Leakage Current OVI -100 +100 nA LKG Overvoltage Trip Hysteresis OV 1% HYS Undervoltage Adjustable Trip UVLO (Note 2) 5 28 V Range Undervoltage Comp Reference UV V falling edge 1.18 1.228 1.276 V REF IN UVS Input Leakage Current UVI -100 +100 nA LKG Undervoltage Trip Hysteresis UV 1% HYS Internal Undervoltage Trip Level INTUV V falling edge 4.1 4.4 4.7 V REF IN Internal Undervoltage Trip INTUV 1% HYS Hysteresis Power-On Trip Level POTL V > +3V, IN rising edge 0.5 0.75 1 V DD Power-On Trip Hysteresis POTL 10 % HYS V = +19V, V < OV and IN OVS REF IN Supply Current I 100 300 A IN V > UV UVS REF V DD V Voltage Range V 2.7 5.5 V DD DD V Undervoltage Lockout V V falling edge 1.55 2.40 V DD DDUVLO DD V Undervoltage Lockout DD V 50 mV D D UVLO HYS Hysteresis V Supply Current I V = +5V, V = 0V 10 A DD VDD DD IN GATE GATE1 Open-Drain MOS R V = 0V, V = 19V, V < OV and ON CB IN OVS REF R 1k ON Resistance V > UV , I = 0.5mA (MAX4959) UVS REF GATE GATE2 Open-Drain MOS R ON R V = 3V, I = 0.5mA 1 k ON CB GATE Resistance 2 Maxim Integrated