EVALUATION KIT AVAILABLE Click here for production status of specific part numbers. MAX5995A/B/C IEEE 802.3bt-Compliant, Powered Device Interface Controllers with Integrated 91W High-Power MOSFET General Description Applications The MAX5995A/MAX5995B/MAX5995C provide a com- IEEE 802.3bt Powered Devices plete interface for a powered device (PD) to comply with VOIP Phones, IP Security Cameras the IEEE 802.3af/at/bt standard in a Power-Over-Ether- Wireless Access Point net (PoE) system. The devices provide the PD with a de- Small Cell, Pico Cell tection signature, classification signature, and an integrat- Lighting ed isolation power switch with startup inrush current con- Building Automation trol. During the startup period, the devices limit the current to 135mA (typ) before switching to the higher current limit Benefits and Features (1800mA to 2400mA, typ) when the isolation power MOS- IEEE 802.3af/at/bt Compliant FET is fully enhanced. The devices feature Multi-Event Type 1~4 PSE Classification Indicator or an External classification, Intelligent MPS (MAX5995B/MAX5995C), Wall Adapter Indicator Output Autoclass (MAX5995C), and an input UVLO with wide Simplified Wall Adapter Interface hysteresis and long deglitch time to compensate for twist- Multi-Event Classification 08 ed-pair cable resistive drop and to assure glitch-free tran- Intelligent MPS (MAX5995B/MAX5995C, Patent sition during power-on/-off conditions. The devices can US9152161) withstand a maximum voltage of 100V at the input. Sleep Mode and Ultra-Low-Power Sleep Mode The devices support a Multi-Event classification method, (MAX5995A/MAX5995B) as specified in the IEEE 802.3bt standard, and provide a 100V Input Absolute Maximum Rating signal to indicate from Type 1 to Type 4 Power Sourcing Inrush Current Limit During Startup Equipment (PSE). The devices can detect the presence Current Limit During Normal Operation Current Foldback Protection of a wall adapter power source connection and allow a smooth switch-over from the PoE power source to the wall Undervoltage Lockout at 36V power adapter. LED Driver with Programmable LED Current (MAX5995A/MAX5995B) The devices also provide a power-good (PG) signal, two- Overtemperature Protection step current limit and foldback control, overtemperature Multi-Event Power Level Indication protection. A sleep mode feature in the MAX5995A/ Autoclass Feature (MAX5995C) MAX5995B minimizes low power consumption while gen- Thermally Enhanced, 5mm x 5mm, 16-Pin TQFN erating the Maintain Power Signature (MPS) to maintain PSE connection. An Ultra-Low-Power sleep mode feature in the MAX5995A/MAX5995B further reduces power con- sumption while still generating MPS current. The MAX5995B/MAX5995C provides Intelligent Maintain Pow- er Signature (IMPS) feature to automatically enable MPS current by detecting the port current. The devices feature a LED driver that is activated during sleep mode, Ultra- Low-Power sleep mode (MAX5995A/MAX5995B), and In- telligent MPS mode (MAX5995B/MAX5995C). Multi-Event indication feature provides patterned signals to indicate power level allocated from PSE to PD in 5 different sce- narios. The MAX5995C provides Autoclass feature to en- able advanced applications that allow the PSE to effec- tively optimize power allocation to PD. The MAX5995A/MAX5995B/MAX5995C are available in a 16-pin, 5mm x 5mm, TQFN power package. These de- vices are rated over the -40C to 125C (MAX5995AATE/ BATE/CATE) and -40C to 85C (MAX5995AETE/BETE/ CETE) temperature ranges. 19-100401 Rev 3 7/19MAX5995A/B/C IEEE 802.3bt-Compliant, Powered Device Interface Controllers with Integrated 91W High-Power MOSFET Absolute Maximum Ratings V to V ........................................................... -0.3V to +100V Operating Temperature Range DD SS RTN, WAD, PG, MEC, DET to V ...................... -0.3V to +100V MAX5995AETE/BETE/CETE ............................-40C to +85C SS CLSA, CLSB, SL, WK/AUC, ULP, LED to V ........ -0.3V to +6V MAX5995AATE/BATE/CATE ..........................-40C to +125C SS Maximum Current on CLSA, CLSB (100ms maximum) .... 100mA Maximum Junction Temperature ......................................+150C Continuous Power Dissipation (T = +70C) (Note 1) (TQFN Storage Temperature Range ..............................-65C to +150C A (derate 28.6mW/C above +70C)) Lead Temperature (soldering, 10s) ................................... +300C Multilayer Board ....................................................... 2285.7mW Soldering Temperature (reflow) ........................................+260C Note 1: Maximum power dissipation is obtained using JEDEC JESD51-5 and JESD51-7 specifications. Note 2: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Package Information 16 TQFN-EP Package Code T1655+4 Outline Number 21-0140 Land Pattern Number 90-0121 Thermal Resistance, Four-Layer Board: Junction-to-Ambient ( ) 35C/W JA Junction-to-Case Thermal Resistance ( ) 2.7C/W JC For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a +, , or - in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/ thermal-tutorial. www.maximintegrated.com Maxim Integrated 2