MAX9981 19-2588 Rev 0 9/02 825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer General Description Features The MAX9981 dual high-linearity mixer integrates a local +27.3dBm Input IP3 oscillator (LO) switch, LO buffer, LO splitter, and two +13.6dBm Input 1dB Compression Point active mixers. On-chip baluns allow for single-ended RF 825MHz to 915MHz RF Frequency Range and LO inputs. The active mixers eliminate the need for an additional IF amplifier because the mixer provides a 70MHz to 170MHz IF Frequency Range typical overall conversion gain of 2.1dB. 725MHz to 1085MHz LO Frequency Range The MAX9981 active mixers are optimized to meet the 2.1dB Conversion Gain demanding requirements of GSM850, GSM900, and 10.8dB Noise Figure CDMA850 base-station receivers. These mixers provide exceptional linearity with an input IP3 of greater than 42dB Channel-to-Channel Isolation +27dBm. The integrated LO driver allows for a wide -5dBm to +5dBm LO Drive range of LO drive levels from -5dBm to +5dBm. In addi- +5V Single-Supply Operation tion, the built-in high-isolation switch enables rapid LO selection of less than 250ns, as needed for GSM trans- Built-In LO Switch with 52dB LO1 to LO2 Isolation ceiver designs. ESD Protection The MAX9981 is available in a 36-pin QFN package Integrated RF and LO Baluns for Single-Ended (6mm 6mm) with an exposed paddle, and is specified Inputs over the -40C to +85C extended temperature range. Ordering Information Applications PART TEMP RANGE PIN-PACKAGE GSM850/GSM900 2G and 2.5G EDGE Base- MAX9981EGX-T -40C to +85C 36 QFN-EP* (6mm 6mm) Station Receivers *EP = Exposed paddle. Cellular cdmaOne and cdma2000 Base- Station Receivers Pin Configuration/ TDMA and Integrated Digital Enhanced Network Functional Diagram (iDEN) Base-Station Receivers TOP VIEW Digital and Spread-Spectrum Communication Systems Microwave Point-to-Point Links RFMAIN 1 27 LO2 MAX9981 TAPMAIN 2 26 GND MAINBIAS 3 25 GND GND 4 24 GND GND 5 23 LOSEL GND 6 22 GND V DIVBIAS 7 21 CC TAPDIV 8 20 GND cdmaOne is a trademark of CDMA Development Group. RFDIV 9 19 LO1 cdma2000 is a trademark of Telecommunications Industry Association. iDEN is a trademark of Motorola, Inc. 6mm x 6mm QFN-EP Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. V V 10 36 CC CC 35 GND 11 GND 34 GND 12 GND 33 IFMAIN+ 13 IFDIV+ 14 32 IFMAIN- IFDIV- 15 31 GND GND V 16 30 V CC CC 17 29 GND GND 18 28 GND GND825MHz to 915MHz, Dual SiGe High-Linearity Active Mixer ABSOLUTE MAXIMUM RATINGS V ........................................................................-0.3V to +5.5V Continuous Power Dissipation (T = +70C) CC A IFMAIN+, IFMAIN-, IFDIV+, IFDIV-, 36-Pin QFN (derate 33mW/C above +70C)..............2200mW MAINBIAS, DIVBIAS, LOSEL..................-0.3V to (V + 0.3V) Operating Temperature Range ...........................-40C to +85C CC TAPMAIN, TAPDIV..............................................................+5.5V Junction Temperature......................................................+150C MAINBIAS, DIVBIAS Current ................................................5mA Storage Temperature Range .............................-65C to +150C RFMAIN, RFDIV, LO1, LO2 Input Power ........................+20dBm Lead Temperature (soldering, 10s) .................................+300C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, V = +4.75V to +5.25V, no RF signals applied, all RF inputs and outputs terminated with 50 , CC 267 resistors connected from MAINBIAS and DIVBIAS to GND, T = -40C to +85C, unless otherwise noted. Typical values are at A V = +5.0V, T = +25C, unless otherwise noted.) CC A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage V 4.75 5.00 5.25 V CC Supply Current I 260 291 325 mA CC Input High Voltage V 3.5 V IH Input Low Voltage V 0.4 V IL LOSEL Input Current I -5 +5 A LOSEL AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, V = +4.75V to +5.25V, P = -5dBm to +5dBm, f = 825MHz to 915MHz, f = 725MHz to 1085MHz, CC LO RF LO T = -40C to +85C, unless otherwise noted. Typical values are at V = +5.0V, P = -5dBm, P = 0dBm, f = 870MHz, A CC RF LO RF f = 770MHz, T = +25C, unless otherwise noted.) (Notes 1, 2) LO A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS RF Frequency f 825 915 MHz RF LO Frequency f 725 1085 MHz LO Must meet RF and LO frequency range. IF IF Frequency f matching components affect IF frequency 70 170 MHz IF range. LO Drive Level P -5 +5 dBm LO Cellular band, V = +5.0V, CC f = 825MHz to 2.7 RF f = 100MHz, IF 850MHz Conversion Gain (Note 3) G low-side injection, dB C GSM band, P = 0dBm, RF f = 880MHz RF 2.1 P = -5dBm LO to 915MHz Gain Variation from Nominal f = 825MHz to 915MHz, 3 0.6 dB RF Inject P = -20dBm at f + 100MHz into IN LO Conversion Loss from LO to IF LO port. Measure 100MHz at IF port as 53 dB P . No RF signal at RF port. OUT Cellular band, 10.8 100MHz IF, f = 825MHz to 850MHz RF Noise Figure NF low-side dB GSM band, injection 11.9 f = 880MHz to 915MHz RF 2 MAX9981