MXD1210 19-0154 Rev 2 11/05 Nonvolatile RAM Controller General Description Features The MXD1210 nonvolatile RAM controller is a very low- Battery Backup power CMOS circuit that converts standard (volatile) Memory Write Protection CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protec- 230A Operating Mode Quiescent Current tion when power to the RAM is in a marginal (out-of-tol- 2nA Backup Mode Quiescent Current erance) condition. When the power supply begins to Battery Freshness Seal fail, the RAM is write-protected, and the device switch- es to battery-backup mode. Optional Redundant Battery Low Forward-Voltage Drop on V Supply Switch CC Applications 5% or 10% Power-Fail Detection Options Microprocessor Systems Tests Battery Condition During Power-Up Computers 8-Pin SO Available Embedded Systems Ordering Information Pin Configurations PART TEMP RANGE PIN-PACKAGE MXD1210C/D 0C to +70C Dice* MXD1210CPA 0C to +70C 8 PDIP TOP VIEW MXD1210CSA 0C to +70C 8 SO MXD1210CWE 0C to +70C 16 Wide SO MXD1210EPA -40C to +85C 8 PDIP MXD1210ESA -40C to +85C 8 SO V 1 8 V CCO CCI MXD1210EWE -40C to +85C 16 Wide SO VBATT1 2 7 VBATT2 MXD1210 MXD1210MJA -55C to +125C 8 CERDIP TOL 3 6 CEO *Contact factory for dice specifications. Devices in PDIP and SO packages are available in both lead- GND 4 5 CE ed and lead-free packaging. Specify lead free by adding the + symbol at the end of the part number when ordering. Lead free DIP/SO not available for CERDIP package. Typical Operating Circuit V VCCI CCO +5V 8 1 VBATT1 N.C. 1 16 N.C. 2 V CC V 2 15 V CCO CCI VBATT2 MXD1210 7 CMOS N.C. 3 14 N.C. RAM CE VBATT1 4 MXD1210 13 VBATT2 CE 5 6 FROM N.C. 5 12 N.C. DECODER 3 4 TOL 6 11 CEO N.C. 7 10 N.C. GND 8 9 CE GND WIDE SO Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com.Nonvolatile RAM Controller ABSOLUTE MAXIMUM RATINGS V to GND ..........................................................-0.3V to +7.0V 8-Pin SO (derate 5.88mW/C above +70C).................471mW CCI VBATT1 to GND.....................................................-0.3V to +7.0V 8-Pin CERDIP (derate 8.00mW/C above +70C).........640mW VBATT2 to GND.....................................................-0.3V to +7.0V 16-Pin Wide SO (derate 9.52mW/C above +70C) .....762mW V to GND ................................................-0.3V to (V + 0.3V) Operating Temperature Range CCO S (V = greater of V , VBATT1, VBATT2) C Suffix.................................................................0C to +70C S CCI Digital Input and Output E Suffix..............................................................-40C to +85C Voltages to GND.....................................-0.3V to (V + 0.3V) M Suffix ...........................................................-55C to +125C CCI Continuous Power Dissipation (T = +70C) Storage Temperature Range .............................-65C to +150C A 8-Pin PDIP (derate 9.09mW/C above +70C)..............727mW Lead Temperature (soldering, 10s) .................................+300C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (T = T to T , unless otherwise noted.) A MIN MAX PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS TOL = GND 4.75 5.50 Supply Voltage V V CCI TOL = V 4.50 5.50 CCO Input High Voltage V 2.2 V IH Input Low Voltage V 0.8 V IL VBATT1 Battery Voltage 1 or 2 batteries (Note 1) 2.0 4.0 V VBATT2 ELECTRICAL CHARACTERISTICSNormal Supply Mode, TOL = V CCO (V = +4.75V to +5.5V, TOL = GND or V = +4.5V to +5.5V, TOL = V T = T to T , unless otherwise noted.) CCI CCI CCO A MIN MAX PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Current I V , CEO open, VBATT1 = VBATT2 = 3V 0.23 0.5 mA CCI CCO V - CCI MXD1210C 0.20 V - CCI Output Supply Voltage V I = 80mA (Note 2) MXD1210E V CCO CCO1 0.21 V - CCI MXD1210M 0.25 MXD1210C 80 Output Supply Current I V - V 0.2V (Note 2) mA MXD1210E 0.23 75 CCO CCI CCO MXD1210M 0.23 65 Input Leakage Current I 1.0 A IL Output Leakage Current I 1.0 A OL High-Level Output Voltage V I = -1mA 2.4 V OH OH Low-Level Output Voltage V I = 4mA 0.4 V OL OL TOL = GND 4.50 4.74 V Trip Point V V CCI CCTP TOL = V 4.25 4.49 CCO 2 MXD1210