SC2200 Dual RF Power Amplifier Linearizer (RFPAL) General Description Benefits The SC2200 belongs to the 4th-generation family of Ease of Use RF PA linearizers (RFPAL) that provides increased Integrated RFIN/RFOUT Solution integration and functionality over the previous generations. Smaller Total System Form Factor (24mm x 26mm) The device is a dual-path linearizer that is a fully-adaptive, Reduces System Power Consumption and OPEX RFIN/RFOUT predistortion linearization solution Reduces BOM Costs and Total Volume optimized for a wide range of amplifiers, power levels, Smaller Power Supply, Heat Sink, and Enclosure and communication protocols. It supports 2G to 4G Lower Back-Off Reduces Transistor Costs standards (FDD and TDD) from 698MHz to 2700MHz as well as an expanded range of signal bandwidths from Features 60MHz down to 1.2MHz. The SC2200 accepts single- Frequency Range: 698MHz2700MHz ended RF signals to eliminate baluns and features a mirrored pinout facilitating design of both paths. The Integrated Preamp and Single-Ended RF I/Os device uses the PA output and input signals to adaptively Single +1.8V Supply Voltage generate an optimized correction function to minimize the External Reference Clock Support: PAs distortion. Using RF-domain analog signal processing 10, 13, 15.36, 19.2, 20, 26, and 30.72MHz enables the SC2200 to operate over wide bandwidths and with very low power consumption. The dual linearizer Packaged in 11mm x 11mm SAWN QFN Package is optimized for high-performance MIMO applications, Operating Case Temperature: -40C to +100C including small cells, active antenna, and distributed RoHS, Green, REACH, and ISO9001 Compliant antenna systems. Dual-Path RFIN/RFOUT Linearizer in CMOS SoC Applications Fully Adaptive Correction Cellular Infrastructure Up to 28dB ACLR and 38dB IMD Improvement (1) Single/Multicarrier, Multistandard: CDMA/EVDO, 1.2MHz < BWSIG 60MHz TD-SCDMA, WiMAX, WCDMA/HSDPA, LTE, and TD-LTE Power Consumption: BTS Amplifiers, RRH, Booster Amplifiers, Repeaters, Duty-Cycled (10%) Feedback: 1500mW Small Cells, Microcells, Picocells, DAS, AAS and (Dual-Path) MIMO Systems 100% Adaptation: 1.95W (Dual-Path) Wide Range of PAs and Output Power Amplifier: Class A/AB, Doherty Average PA Output Power Examples: Cellular Infrastructure: 27dBm to 40dBm PA Process: LDMOS, GaN, HBT, GaAs and InGaP Ordering Information and Block Diagram appears at end of data sheet. 19-7748 Rev 1 6/16SC2200 Dual RF Power Amplifier Linearizer (RFPAL) Absolute Maximum Ratings Supply Voltage (AVDD18 to GND) .......................-0.2V to +2.2V Input to RF Inputs (RMS) .................................................+0dBm Supply Voltage (DVDD18 to GND).......................-0.2V to +2.2V Junction Temperature ......................................................+150C Supply Voltage (V to GND) ..........................-0.2V to +2.2V Storage Temperature ........................................ -65C to +150C DDIO Input Voltage (1.8V pins) .........................-0.2V to V + 0.2V Operating Case Temperature ........................... -40C to +100C DD18 Input Voltage (V pins) ...................... -0.2V to V + 0.2V DDIO DDIO Warning: Any stress beyond the ranges indicated may damage the device permanently. The specified stress ratings do not imply functional performance in these ranges. Exposure of the device to the absolute maximum ratings for extended periods of time is likely to degrade the reliability of this product DC Characteristics PARAMETER (Note 1) MIN TYP MAX UNITS Supply Voltage (DVDDIO to GND) 1.7 1.8 1.9 V Supply Voltage (AVDD18 to GND) 1.7 1.8 1.9 V Supply Voltage (DVDD18 to GND) 1.7 1.8 1.9 V Supply Peak Current (DVDDIO to GND) (Notes 2, 3, 5, 6) 50 mA Supply Peak Current (AVDD18 to GND) (Notes 1, 2, 3, 5) 1300 mA Supply Peak Current (DVDD18 to GND) (Notes 1, 2, 3, 5) 400 Average Power Dissipation: Full-Speed Adaptation (Notes 3, 4, 6) 1950 mW Average Power Dissipation: Duty-Cycled Feedback (Notes 3, 5, 6) 1500 mW Note 1: All specifications in this table apply to both paths being enabled. Note 2: Peak current includes supply decoupling network. Refer to the Hardware Design Guide for sizing of the voltage regulators. Note 3: Characterized at over operating voltages, case temperature with 20MHz input signal BW, and V = 1.8V. DVDDIO Note 4: Continuous adaptation, tracking (100% duty cycled feedback), and advanced features active or inactive. Note 5: Duty-cycled feedback power dissipations averaged over on time of 100ms (9%) and off time of 1.0s (91%). Note 6: Power dissipation can be FW dependent. Refer to the FW release notes for any changes to values listed above. Radio Frequency Signals (Operation at T = +25C, V = 1.8V, V = 1.8V, V = 1.8V and 20MHz external clock, unless otherwise specified.) A AVDD18 DVDDIO DVDD18 PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency (Note 7 f 698 2700 MHz ) Input Signal Bandwidth (Note 8) BW 1.2 60 MHz SIG Noise Power Relative to -3dBm at RFOUT -137 dBm/Hz RFINDLY-RFOUT Preamp Gain G When set to default FW settings 10 dB T = -40C to +100C at 2140MHz +1 C RFINDLY-RFOUT Preamp Gain G dB TEMPDEV Deviation from T = +25C C T = -40C to +100C at 2700MHz -2 C Path A/B Isolation ISO At 2700MHz 43 dB Note 7: See the Operating Frequency Range table for frequency limits of each defined band. Note 8: Correction performance across range of input signal BWs also depends on PA output power and carrier configuration. Maxim Integrated 2 www.maximintegrated.com