X-On Electronics has gained recognition as a prominent supplier of APS12808L-OBMX-BA DRAM across the USA, India, Europe, Australia, and various other global locations. APS12808L-OBMX-BA DRAM are a product manufactured by AP Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

APS12808L-OBMX-BA AP Memory

APS12808L-OBMX-BA electronic component of AP Memory
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Part No.APS12808L-OBMX-BA
Manufacturer: AP Memory
Category: DRAM
Description: DRAM IoT RAM 128Mb OPI (x8) DDR 200MHz, 1.8V, Ext. Temp., BGA24
Datasheet: APS12808L-OBMX-BA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.6783 ea
Line Total: USD 3.68 
Availability - 581
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
581
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.6783
10 : USD 3.3773
100 : USD 2.9983
250 : USD 2.9983
500 : USD 2.9092
1000 : USD 2.8089
2500 : USD 2.6751
4800 : USD 2.5079

   
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We are delighted to provide the APS12808L-OBMX-BA from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APS12808L-OBMX-BA and other electronic components in the DRAM category and beyond.

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APS12808L-OBMx DDR OPI Xccela PSRAM Double-Data-Rate Octal SPI PSRAM Specifications Features Single Supply Voltage Low Power Features o VDD=1.62 to 1.98V o Partial Array Self-Refresh (PASR) o VDDQ=1.62 to 1.98V o Auto Temperature Compensated Self- Refresh (ATCSR) by built-in temperature Interface: Octal SPI with DDR Xccela mode, two bytes transfers per one clock cycle sensor o User configurable refresh rate Performance: Clock rate up to 200MHz, o Ultra Low Power (ULP) Half Sleep mode 400MB/s read/write throughput with data retained Organization: 128Mb, 16M x 8bits with 1024 Software Reset bytes page size Reset Pin Available o Column address: AY0 to AY9 o Row address: AX0 to AX13 Output Driver LVCMOS with programmable Refresh: Self-managed drive strength Data Mask (DM) for write data Operating Temperature Range o Tc = -40C to +85C (standard range) Data Strobe (DQS) enabled highspeed read o Tc = -40C to +105C (extended range) operation Maximum Standby Current Register Configurable write and read initial o 600A 105C latencies o 400A 85C Write Burst Length, maximum 1024 bytes, o 200A 25C minimum 2 bytes o 60A 25C (Half Sleep Mode with data Wrap & Hybrid Burst in 16/32/64/1K lengths retained) Linear Burst Command Row Boundary Crossing (RBX) o read operations can be enabled via Mode Register. o RBX Write is NOT supported o RA 13 Boundary Crossing is NOT supported between 2 dies APM Octal PSRAM Datasheet.pdf - Rev. 3.0a Dec 11, 2019 1 of 28 AP Memory reserves the right to change products and/or specifications without notice 2019 AP Memory. All rights reserved APS12808L-OBMx DDR OPI Xccela PSRAM Table of Contents 1 Table of Contents 1 Table of Contents ............................................................................................................. 2 2 Package Information ........................................................................................................ 3 3 Package Outline Drawing ................................................................................................. 4 4 Ordering Information ....................................................................................................... 5 5 Signal Table ...................................................................................................................... 6 6 Power-Up Initialization .................................................................................................... 7 6.1 Power-Up Initialization Method 1 (via. RESET pin) ............................................... 7 6.2 Power-Up Initialization (via. Global Reset) ............................................................. 8 7 Interface Description ....................................................................................................... 9 7.1 Address Space ......................................................................................................... 9 7.2 Burst Type & Length ................................................................................................ 9 7.3 Command/Address Latching ................................................................................... 9 7.4 Command Truth Table ............................................................................................ 9 7.5 Read Operation ..................................................................................................... 10 7.6 Write Operation .................................................................................................... 13 7.7 Control Registers ................................................................................................... 14 7.8 Half Sleep Mode .................................................................................................... 20 7.9 Deep Power Down Mode ...................................................................................... 21 8 Electrical Specifications: ................................................................................................ 22 8.1 Absolute Maximum Ratings .................................................................................. 22 8.2 Pin Capacitance ..................................................................................................... 22 8.3 Decoupling Capacitor Requirement ...................................................................... 23 8.4 Operating Conditions ............................................................................................ 23 8.5 DC Characteristics ................................................................................................. 24 8.6 I SB Partial Array Refresh Current ......................................................................... 25 8.7 AC Characteristics ................................................................................................. 26 9 Change Log ..................................................................................................................... 28 APM Octal PSRAM Datasheet.pdf - Rev. 3.0a Dec 11, 2019 2 of 28 AP Memory reserves the right to change products and/or specifications without notice 2019 AP Memory. All rights reserved

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
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