X-On Electronics has gained recognition as a prominent supplier of APS51208N-OBR-BD DRAM across the USA, India, Europe, Australia, and various other global locations. APS51208N-OBR-BD DRAM are a product manufactured by AP Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

APS51208N-OBR-BD AP Memory

APS51208N-OBR-BD electronic component of AP Memory
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Part No.APS51208N-OBR-BD
Manufacturer: AP Memory
Category: DRAM
Description: DRAM IoT RAM 512Mb OPI (x8) DDR 200MHz, 1.8V, Ind. Temp., BGA24
Datasheet: APS51208N-OBR-BD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.424 ea
Line Total: USD 6.42 
Availability - 4553
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4553
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 6.424
10 : USD 5.94
100 : USD 5.335
250 : USD 5.313
500 : USD 5.06
1000 : USD 4.873
4800 : USD 4.444

   
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We are delighted to provide the APS51208N-OBR-BD from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the APS51208N-OBR-BD and other electronic components in the DRAM category and beyond.

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APS25608N-OBRx DDR Octal SPI PSRAM Double-Data-Rate Octal SPI PSRAM Specifications Features Single Supply Voltage: Low Power Features: o VDD =1.62 to 1.98V o Partial Array Self-Refresh (PASR) o VDDQ =1.62 to 1.98V o Auto Temperature Compensated Self- Interface: Octal SPI with DDR mode, two bytes Refresh (ATCSR) self-managed by a built-in temperature sensor transfers per one clock cycle o Ultra Low Power Half Sleep mode with data Performance: Clock rate up to 200MHz, retention. (400MBps read/write throughput) Software reset Organization: 256Mb, 32M x 8bits with 2048 Reset pin available bytes per page o Column address: AY0 to AY10 Output driver LVCMOS with programmable o Row address: AX0 to AX13 drive strength Refresh: Self-managed Data mask (DM) for write operation Operating temperature range Data strobe (DQS) for high speed read operation o TC = -40C to +85C (standard range)* Write burst length, maximum 2048 Byte, o TC = -40C to +105C (extended range)* minimum 2 Byte. Typical mean Room Standby Current: Wrap & hybrid burst in 16/32/64/2K lengths. o 90A 25C (Standby mode) Linear Burst Command o 40A 25C (Half Sleep Mode with data Row Boundary Crossing (RBX) read operations retained) enabled via Mode Register Maximum Standby Current: o 1100A 105C o 680A 85C * please refer to Table 1 APM Octal PSRAM Datasheet.pdf - Rev. 1.0 Jul 27, 2020 1 of 29 AP Memory reserves the right to change products and/or specifications without notice 2020 AP Memory. All rights reserved APS25608N-OBRx DDR Octal SPI PSRAM Table of Contents 1 Table of Contents 1 Table of Contents ............................................................................................................. 2 2 Package Information ........................................................................................................ 4 2.1 Package Types : BGA 24b X8 (BD) ................................................................................... 4 2.2 Package Outline Drawing .................................................................................................... 5 2.2.1 BGA 24b , package code BD .................................................................................................. 5 3 Ordering Information ....................................................................................................... 6 4 Signal Table ...................................................................................................................... 7 5 Power-Up Initialization .................................................................................................... 8 5.1 Power-Up Initialization Method 1 (via. RESET pin) ........................................................... 8 5.2 Power-Up Initialization Method 2 (via. Global Reset) ........................................................ 9 6 Interface Description ..................................................................................................... 10 6.1 Address Space ................................................................................................................... 10 6.2 Burst Type & Length ......................................................................................................... 10 6.3 Command/Address Latching ............................................................................................. 10 6.4 Command Truth Table ...................................................................................................... 10 6.5 Read Operation ................................................................................................................. 11 6.6 Write Operation ................................................................................................................ 14 6.7 Control Registers ............................................................................................................... 15 6.8 Half Sleep Mode ................................................................................................................ 21 6.9 Deep Power Down Mode .................................................................................................. 22 7 Electrical Specifications: ................................................................................................ 23 7.1 Absolute Maximum Ratings .............................................................................................. 23 7.2 Pin Capacitance ................................................................................................................. 23 7.3 Decoupling Capacitor Requirement .................................................................................. 24 7.3.1 Low ESR cap C1: .................................................................................................................. 24 7.3.2 Large cap C2: ....................................................................................................................... 24 7.4 Operating Conditions ........................................................................................................ 24 7.5 DC Characteristics ............................................................................................................. 25 7.6 ISB Partial Array Refresh Current ...................................................................................... 26 7.7 AC Characteristics ............................................................................................................. 27 APM Octal PSRAM Datasheet.pdf - Rev. 1.0 Jul 27, 2020 2 of 29 AP Memory reserves the right to change products and/or specifications without notice 2020 AP Memory. All rights reserved

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
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