AP54RHC301BLT-R Apogee Semiconductor

POGEE SEMICONDUCTOR AP54RHC301 Radiation Hardened Dual 3-Input Majority Voter with cold sparing Proprietary cold-sparing capability with zero 1 GENERAL DESCRIPTION static power penalty Built-in triple redundancy for enhanced reliabil- The AP54RHC301 is a radiation-hardened by design ity dual 3-Input Majority Voter that is ideally suited for space, medical imaging and other applications de- Internal power-on reset (POR) circuitry ensures manding radiation tolerance and high reliability. It is reliable power up and power down responses fabricated in a 180 nm CMOS process utilizing propri- during hot plug and cold sparing operations etary radiation-hardening techniques, delivering high resiliency to single-event e ects (SEE) and to a total Class 2 ESD protection (4000 V HBM, 500 V CDM) ionizing dose (TID) up to 30 krad (Si). TID resilience of 30krad(Si) This device is a member of the Apogee Semiconductor AP54RHC logic family operating across a voltage supply 2 SEL resilient up to LET of 80MeV-cm /mg range of 1.65Vto5.5V. The AP54RHC301 is an unique discrete majority voter 1.2 LOGIC DIAGRAM logic function that o ers two instances of a triple-input The AP54RHC301 logic function is shown below: voter gate, with individual error outputs. In addition, a dedicated error detected indication is available, in addition to an external error input signal. CC V Zero-power penalty cold-sparing is supported, along 14 with Class 2 ESD protection on all inputs and outputs. B1C1 A proprietary output stage and robust power-on reset A1C1 4 Y1 (POR) circuit allow the AP54RHC301 to be cold-spared 1 1 A B in any redundant conguration with no static power loss on any pad of the device. The redundant out- A1B1C1 put stage also features a high drive capability with low 1 5 static power loss. EOUT1 A1 2 B1 A1B1C1 The AP54RHC301 also features a triple-redundant de- 3 C1 sign throughout its entire circuitry, which allows it to 6 13 IN be immune to single-event transients (SET) without re- E EDET quiring additional redundant devices. 8 A2 9 A2B2C2 B2 Ordering information may be found in Table 9 on Page 10 12 12. C2 EOUT2 A2B2C2 A2B2 A2C2 11 1.1 FEATURES Y2 B2C2 1.65VDCto5.5VDC operation 7 Inputs tolerant up to 5.5 VDC at any V CC GND Provides logic-level down translation to V CC Figure 1: AP54RHC301 logic diagram Extended operating temperature range (-55C to +125C) COPYRIGHT 2021 APOGEE SEMICONDUCTOR REVISED: 2021-07-30 DOC ID: 601-000-008-A06 (SUBMIT DOCUMENTATION FEEDBACK) 1 / 13AP54RHC301 Rad-Hard Dual 3-Input Majority Voter POGEE SEMICONDUCTOR DATASHEET with cold sparing CONTENTS 1 General Description 1 5.5 Radiation Resilience . 7 1.1 Features 1 5.6 Characteristics Measurement Information 7 1.2 Logic Diagram . 1 6 Detailed Description 8 2 Acronyms and Abbreviations 2 7 Applications Information 9 7.1 Applications Example 9 3 Logic Data 3 7.2 Power Supply Recommendations . 10 3.1 Truth Table 3 7.3 Application Tips . 10 4 Pin Conguration 3 8 Packaging Information 11 5 Electrical Characteristics 4 9 Ordering Information 12 5.1 Absolute Maximum Ratings . 4 5.2 Recommended Operating Conditions . 5 10 Revision History 12 5.3 Static Characteristics 6 5.4 Dynamic Characteristics . 7 11 Legal 13 LIST OF TABLES 1 Truth Table 3 6 DC Electrical Characteristics 6 2 Device Pinout . 3 7 AC Electrical Characteristics 7 3 Absolute Maximum Ratings . 4 8 Radiation Resilience Characteristics . 7 4 Recommended Operating Conditions . 5 9 Ordering Information 12 5 Thermal Information . 5 LIST OF FIGURES 1 AP54RHC301 logic diagram . 1 6 Output Pin Structure . 8 2 Device Pinout . 3 7 Voter Example . 9 3 Load Circuit 7 8 Cold Spare Example . 10 4 Propagation Delay 7 9 Package Mechanical Drawing 11 5 Input Pin Structure 8 10 Part Number Decoder 12 2 ACRONYMS AND ABBREVIATIONS ESD Electrostatic Discharge POR Power On Reset RHA Radiation Hardness Assurance SEE Single Event E ects SEL Single Event Latchup SET Single Event Transient TID Total Ionizing Dose TMR Triple Modular Redundancy CDM Charged-device Model HBM Human-body Model COPYRIGHT 2021 APOGEE SEMICONDUCTOR REVISED: 2021-07-30 DOC ID: 601-000-008-A06 (SUBMIT DOCUMENTATION FEEDBACK) 2 / 13