Features Applications Lead free device (RoHS compliant*) High frequency switching power supplies Low profile Inverters Low power loss, high efficiency Free wheeling UL 94V-0 classification Polarity protection CD1408-F1200~F11000 Surface Mount Rectifier Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic Tin Plated Connectors components. Bourns offers Rectifier Diodes for rectification applications, in compact chip package 1408 size format (compatible with SOD87, SOD123 formats), which offers PCB real estate savings and are considerably smaller than most competitive parts. The Glass Passivated Rectifier Diodes offer a forward current of1Awitha FRP Substrate and Epoxy choice of repetitive peak reverse voltage of 200 V up to 1000 V, with a 300 nS Underfill maximum recovery time. Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A CD1408- Parameter Symbol Unit F1200 F1400 F1600 F1800 F11000 Maximum Repetitive Peak Reverse Voltage V 200 400 600 800 1000 V RRM Maximum RMS Voltage V 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 200 400 600 800 1000 V DC 1 Max. Average Forward Rectified Current I 1.0 A (AV) DCReverseCurrent RatedDCBlockingVoltage I 5.0 A R ( T =25C) a DCReverseCurrent RatedDCBlockingVoltage I 30.0 A R ( T = 125 C) a DCReverseCurrent RatedDCBlockingVoltage I 50.0 A R ( T = 150 C) a 2 Typical Junction Capacitance C 15 pF J Instantaneous Forward Voltage I =1A V 1.3 V F F 3 Maximum Reverse Recovery Time T 300 ns rr Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 30.0 A FSM (JEDEC Method) Typical Thermal Resistance Rj-a 80 C/Watt Typical Thermal Resistance Rj-l 40 C/Watt Notes: 1 See Forward Derating Curve. 2 Measured 1.0 MHz and applied reverse voltage of 4.0 VDC. 3 Reverse recovery test condition: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Thermal Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol CD1408-F1200~F11000 Unit Operating Temperature Range TJ -65 to +175 C Storage Temperature Range TSTG -65 to +175 C *RoHS Directive 2015/863, Mar 31, 2015 and Annex. WARNING Specications are subject to change without notice. Users should verify actual device performance in their specic Cancer and Reproductive Harm applications. The products described herein and this document are subject to specic legal disclaimers as set forth on the www.P65Warnings.ca.gov last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. *RoHS COMPLIANTCD1408-F1200~F11000 Surface Mount Rectifier Diode Performance Graphs Forward Current Derating Curve Maximum Non-Repetitive Surge Current 30 Pulse Width 8.3 ms 25 Single Half Sine-Wave (JEDEC Method) 1.50 1.25 20 1.00 15 0.75 0.50 60 Hz 10 Resistive or 0.25 Inductive Load 0 0 1 10 100 0 50 75 100 125 150 175 200 Lead Temperature (C) Number of Cycles at 60 Hz Typical Forward Characteristics Typical Reverse Characteristics 10.00 100 Pulse Width = 300 s 1 % Duty Cycle 1.00 10 TJ = 150 C 0.10 1 TJ = 125 C TJ = 25 C 0.01 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 020 40 60 80 100 110 Instantaneous Forward Voltage (Volts) Percent of Rated Peak Reverse Voltage (%) Typical Junction Capacitance 200 100 60 40 20 10 6 4 TJ = 25 C Specications are subject to change without notice. Users should verify actual device performance in their specic applications. 2 The products described herein and this document are subject to specic legal 1 disclaimers as set forth on the last page of this document, and at 02.100.2 0.4 1.0 2 4 100 40 10 www.bourns.com/docs/legal/disclaimer.pdf. Reverse Voltage (Volts) Average Forward Current (Amps) Instantaneous Forward Current (Amps) Junction Capacitance (pF) Instantaneous Reverse Leakage Current (A) Peak Forward Surge Current (Amps)