Features Applications Lead free device (RoHS compliant*) High frequency switching power supplies Low profile Inverters Low power loss, high efficiency Free wheeling UL 94V-0 classification Polarity protection CD1408-R1200~R11000 Surface Mount Rectifier Diode General Information The markets of portable communications, computing and video equipment are Tin Plated challenging the semiconductor industry to develop increasingly smaller electronic Connectors components. Bourns offers Rectifier Diodes for rectification applications, in compact chip package 1408 size format (compatible with SOD87, SOD123 formats), which offers PCB real estate savings and are considerably smaller than most competitive FRP Substrate parts. The Glass Passivated Rectifier Diodes offer a forward current of 1 A with a and Epoxy choice of repetitive peak reverse voltage of 200 V up to 1000 V. Underfill Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A CD1408- Parameter Symbol Unit R1200 R1400 R1600 R1800 R11000 Maximum Repetitive Peak Reverse Voltage V 200 400 600 800 1000 V RRM Maximum RMS Voltage V 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 200 400 600 800 1000 V DC 1 Max. Average Forward Rectified Current I 1.0 A (AV) DC Reverse Current Rated DC Blocking Voltage I R 1.0 A ( T = 25 C) a DC Reverse Current Rated DC Blocking Voltage I R 30.0 A ( T = 125 C) a DC Reverse Current Rated DC Blocking Voltage I R 50.0 A ( T = 150 C) a 2 Typical Junction Capacitance C 12 pF J Instantaneous Forward Voltage I = 1 A V 1.0 V F F 3 Maximum Reverse Recovery Time T 3000 ns rr Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 30.0 A FSM (JEDEC Method) Typical Thermal Resistance Rj-a 80 C/Watt Typical Thermal Resistance Rj-l 40 C/Watt Notes: 1 See Forward Derating Curve. 2 Measured 1.0 MHz and applied reverse voltage of 4.0 VDC. 3 Reverse recovery test condition: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Thermal Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol CD1408-R1200~R11000 Unit Operating Temperature Range TJ -65 to +175 C Storage Temperature Range TSTG -65 to +175 C *RoHS Directive 2015/863, Mar 31, 2015 and Annex. WARNING Specications are subject to change without notice. Users should verify actual device performance in their specic Cancer and Reproductive Harm applications. The products described herein and this document are subject to specic legal disclaimers as set forth on the www.P65Warnings.ca.gov last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. *RoHS COMPLIANTCD1408-R1200~R11000 Surface Mount Rectifier Diode Performance Graphs Forward Current Derating Curve Maximum Non-Repetitive Surge Current 1.50 30 1.25 25 1.00 20 0.75 15 60 Hz 0.50 Resistive or Pulse Width 8.3 ms 10 0.25 Inductive Load Single Half Sine-Wave (JEDEC Method) 0 0 0 50 75 100 125 150 175 200 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Typical Forward Characteristics Typical Reverse Characteristics 10.00 100 1.00 10 TJ = 125 C TJ = 100 C 0.10 1 Pulse Width = 300 s 1 % Duty Cycle 0.1 0.01 020 40 60 80 100 110 04.4 0.601.8 1.0.2 1. 1.6 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (Volts) Typical Junction Capacitance 200 100 60 40 20 10 6 4 TJ = 25 C Specications are subject to change without notice. 2 Users should verify actual device performance in their specic applications. The products described herein and this document are subject 1 to specic legal disclaimers as set forth on the last page of this document, 02.100.2 0.4 1.0 2 4 100 40 10 and at www.bourns.com/docs/legal/disclaimer.pdf. Reverse Voltage (Volts) Junction Capacitance (pF) Average Forward Current (Amps) Instantaneous Forward Current (Amps) Instantaneous Reverse Leakage Current (A) Peak Forward Surge Current (Amps)