CD214B-B260R Bourns

Features Applications n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters n Telecommunications CD214B-B2xR Series Schottky Barrier Rectifier Chip Diode General Information Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AA (SMB) size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 2 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A CD214B- Parameter Symbol Unit B220R B240R B260R B2100R Maximum Repetitive Peak Reverse Voltage V 20 40 60 100 V RRM Maximum Average Forward Current I 2 A F(AV) Maximum Peak Forward Surge Current I 50 A FSM (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range T -55 to +125 -55 to +150 C OPR Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol Condition or Model Min. Typ. Max. Unit CD214B-B220R 0.41 CD214B-B240R I = 1 A F CD214B-B260R 0.5 CD214B-B2100R 0.62 Maximum Instantaneous V V F (NOTE 1) Forward Voltage CD214B-B220R 0.49 0.5 CD214B-B240R I = 2 A F CD214B-B260R 0.6 0.7 CD214B-B2100R 0.75 0.85 DC Reverse Current I V = V 0.025 0.2 mA R R RRM Typical Junction Capacitance C V = 4 V, f = 1.0 MHz 115 pF J R Junction to Typical R 65 JA Ambient Thermal C/W Resistance Junction to R 17 (NOTE 2) JL Lead NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. *RoHS COMPLIANT VERSIONS AVAILABLE *RoHS COMPLIANT LEAD FREE LEAD FREE VERSIONS ARE RoHS COMPLIANT* CD214B-B2xR3312 - 2 Series mm SchottkySMD Trimming Barrier Rectifier Potentiometer Chip Diode Performance Graphs Max. Peak Forward Surge Current Forward Current Derating Curve 60 2.0 CD214B-B260R 50 CD214B-B2100R 8.3 ms Single Half 40 Sine-Wave CD214B-B220R (JEDEC Method) CD214B-B240R 1.0 30 Resistive or Inductive Load 20 PCB Mounted on 5.0 x 5.0 mm 10 (0.2 x 0.2 inch) Copper Pad Areas 0 0 0507090 110 130 150 170 010 100 Lead Temperature (C) Number of Cycles 60 Hz Typical Instantaneous Forward Characteristics Typical Reverse Characteristics 10 100 CD214B-B260R CD214B-B220R 10 CD214B-B240R 1 T = 100 C J 1 CD214B-B2100R 0.1 0.1 0.01 0.01 T = 25 C T = 25 C a J 0.001 0.001 020 40 60 80 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (Volts) Typical Junction Capacitance 400 100 T = 25 C J f = 1.0 MHz V = 50 mVP-P sig 10 0.1 1.0 10 100 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214A-B160R CD214A-B120R CD214A-B140R CD214A-B1100R 400 400 400 T = 25 C T = 25 C J T = 25 C J J f = 1.0 MHz f = 1.0 MHz f = 1.0 MHz V = 50 mVP-P V = 50 mVP-P sig V = 50 mVP-P sig sig 100 100 100 10 10 10 0.1 1.0 10 100 0.1 1.0 10 100 0.1 1.0 10 100 Reverse Voltage (Volts) Reverse Voltage (Volts) Reverse Voltage (Volts) Junction Capacitance (pF) Average Forward Rectified Current Instantaneous Forward Current (A) (Amps) Junction Capacitance (pF) Junction Capacitance (pF) Peak Forward Surge Current Instantaneous Reverse Current (mA) (Amps) Junction Capacitance (pF)