CD214B-B360R Bourns

Features Applications n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters n Telecommunications CD214B-B3xR Series Schottky Barrier Rectifier Chip Diode General Information Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AA (SMB) size format. The Schottky Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A CD214B- Parameter Symbol Unit B320R B340R B360R B3100R Maximum Repetitive Peak Reverse Voltage V 20 40 60 100 V RRM Maximum Average Forward Current I 3 A F(AV) Maximum Peak Forward Surge Current I 80 A FSM (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range T -55 to +125 -55 to +150 C OPR Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol Condition or Model Min. Typ. Max. Unit CD214B-B320R 0.40 CD214B-B340R I = 1 A F CD214B-B360R 0.48 Maximum Instantaneous CD214B-B3100R 0.58 Forward Voltage V V F CD214B-B320R (NOTE 1) 0.48 0.50 CD214B-B340R I = 3 A F CD214B-B360R 0.65 0.70 CD214B-B3100R 0.78 0.85 DC Reverse Current I V = V 0.04 0.50 mA R R RRM Typical Junction Capacitance C V = 4 V, f = 1.0 MHz 180 pF J R Junction to Typical 55 R JA Ambient Thermal C/W Resistance Junction to 17 (NOTE 2) R JL Lead NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. *RoHS COMPLIANT VERSIONS AVAILABLE *RoHS COMPLIANT LEAD FREE LEAD FREE VERSIONS ARE RoHS COMPLIANT* CD214B-B3xR3312 - 2Series mm SchottkySMD Trimming Barrier Rectifier Potentiometer Chip Diode Performance Graphs 3.0 100 CD214B-B360R Forward Current Derating Curve Max. Peak Forward Surge Current 3.0 100 CD214B-B3100R 80 8.3 ms Single Half CD214B-B360R 100 3.0 Sine-Wave 2.0 CD214B-B3100R 6080 8.3 ms CD214B-B320R (JEDEC Method)Single Half CD214B-B360R CD214B-B340R 80 Sine-Wave 2.0 CD214B-B3100R 8.3 ms 60 40 CD214B-B320R Single Half Resistive or (JEDEC Method) CD214B-B340R 2.0 Sine-Wave 1.0 Inductive Load 60 40 20 CD214B-B320R PCB Mounted on (JEDEC Method) Resistive or CD214B-B340R 5.0 x 5.0 mm 1.0 Inductive Load 40 (0.2 x 0.2 inch) 20 0 PCB Mounted on Resistive or Copper Pad Areas 010 100 5.0 x 5.0 mm 1.00 Inductive Load 20 (0.2 x 0.2 inch) 05PCB Mounted on 070 90 110 130 150 170 0 Number of Cycles 60 Hz Copper Pad Areas 5.0 x 5.0 mm 010 100 0 Lead Temperature (C) (0.2 x 0.2 inch) 0 05070 90 110 130 150 170 Number of Cycles 60 Hz Copper Pad Areas 010 100 0 Lead Temperature (C) 05070 90 110 130 150 170 Number of Cycles 60 Hz Lead Temperature (C) 10 100 Typical Instantaneous Forward Characteristics Typical Reverse Characteristics CD214B-B360R 10 100 CD214B-B320R 10 T = 100 C CD214B-B340R J CD214B-B360R 10 100 CD214B-B320R 10 CD214B-B360R T = 100 C CD214B-B340R 1 J CD214B-B3100R 1 CD214B-B320R 10 T = 100 C CD214B-B340R J 1 CD214B-B3100R 1 0.1 1 CD214B-B3100R 1 0.1 0.1 0.01 0.1 T = 25 C 0.1 J 0.01 0.1 0.001 T = 25 C J 0.01 020 40 60 80 100 T = 25 C a 0.01 T = 25 C J 0.001 Percent of Rated Peak Reverse Voltage (%) 0 0.2 0.4 0.6 0.8 1.0 1.2 020 40 60 80 100 T = 25 C a 0.01 0.001 Instantaneous Forward Voltage (Volts) Percent of Rated Peak Reverse Voltage (%) 020 40 60 80 100 0 0.2 0.4 0.6 0.8 T = 25 C1.0 1.2 a 0.01 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (Volts) 0 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage (Volts) Typical Junction Capacitance 400 400 400 100 T = 25 C J f = 1.0 MHz 100 V = 50 mVP-P sig T = 25 C J f = 1.0 MHz 100 V = 50 mVP-P T = 25 C sig J 10 f = 1.0 MHz 0.1 1.0 10 100 V = 50 mVP-P sig 10 Reverse Voltage (Volts) 0.1 1.0 10 100 10 Reverse Voltage (Volts) Specifications are subject to change without notice. 0.1 1.0 10 100 The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Reverse Voltage (Volts) Users should verify actual device performance in their specific applications. CD214A-B160R CD214A-B120R CD214A-B140R CD214A-B1100R 400 400 400 CD214A-B160R CD214A-B120R T = 25 C T = 25 C J T = 25 C J J CD214A-B140R CD214A-B1100R f = 1.0 MHz 400 f = 1.0 MHz f = 1.0 MHz 400 400 CD214A-B160R CD214A-B120R V = 50 mVP-P V = 50 mVP-P sig V = 50 mVP-P sig sig T = 25 C T = 25 C J CD214A-B140R T = 25 C CD214A-B1100R J J 100400 100 100400 f = 1.0 MHz 400 f = 1.0 MHz f = 1.0 MHz V = 50 mVP-P V = 50 mVP-P sigT = 25 C V = 50 mVP-P sigT = 25 C J sigT = 25 C J J f = 1.0 MHz 100 f = 1.0 MHz f = 1.0 MHz 100 100 V = 50 mVP-P V = 50 mVP-P sig V = 50 mVP-P sig sig 100 100 100 10 10 10 0.1 1.0 10 100 0.1 1.0 10 100 0.1 1.0 10 100 Reverse Voltage (Volts) Reverse Voltage (Volts) Reverse Voltage (Volts) 10 10 10 0.1 1.0 10 100 0.1 1.0 10 100 0.1 1.0 10 100 Reverse Voltage (Volts) 10 Reverse Voltage (Volts) Reverse Voltage (Volts) 10 10 0.1 1.0 10 100 0.1 1.0 10 100 0.1 1.0 10 100 Reverse Voltage (Volts) Reverse Voltage (Volts) Reverse Voltage (Volts) Junction Capacitance (pF) Junction Capacitance (pFJunction Capacitance (pF) ) Average Forward Rectified Current Average Forward Rectified Current Average Forward Rectified Current Instantaneous Forward Current (A) Instantaneous Forward Current (A)Instantaneous Forward Current (A) (Amps) (Amps)(Amps) Junction Capacitance (pF) Junction Capacitance (pF)Junction Capacitance (pF) Junction Capacitance (pF) Junction Capacitance (pFJunction Capacitance (pF) ) Peak Forward Surge Current Instantaneous Reverse Current (mA) Peak Forward Surge Current Peak Forward Surge Current Instantaneous Reverse Current (mA)Instantaneous Reverse Current (mA) (Amps) (Amps)(Amps) Junction Capacitance (pF) Junction Capacitance (pFJunction Capacitance (pF) )