Features Applications n RoHS compliant* n Switching Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters n Telecommunications CD214C-B3xR Series Schottky Barrier Rectifier Chip Diode General Information Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AB (SMC) size format. The Schottky Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A CD214C- Parameter Symbol Unit B320R B340R B360R B3100R Maximum Repetitive Peak Reverse Voltage V 20 40 60 100 V RRM Maximum Average Forward Current I 3 A F(AV) Maximum Peak Forward Surge Current I 100 A FSM (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range T -55 to +125 -55 to +150 C OPR Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol Condition or Model Min. Typ. Max. Unit CD214C-B320R 0.38 CD214C-B340R I = F 1 A CD214C-B360R 0.48 CD214C-B3100R 0.58 Maximum Instantaneous Forward Voltage V V F (NOTE 1) CD214C-B320R 0.47 0.5 CD214C-B340R I = F 3 A CD214C-B360R 0.65 0.7 CD214C-B3100R 0.78 0.85 V = R DC Reverse Current I 0.025 0.5 mA R V RRM Typical Junction Capacitance C V = 4 V, f = 1.0 MHz 180 pF J R Junction to R 55 JA Ambient Typical Thermal Resistance C/W (NOTE 2) Junction to R 17 JL Lead NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. *RoHS COMPLIANT VERSIONS AVAILABLE *RoHS COMPLIANT LEAD FREE LEAD FREE VERSIONS ARE RoHS COMPLIANT* CD214C-B3xR3312 - 2Series mm SchottkySMD Trimming Barrier Rectifier Potentiometer Chip Diode Performance Graphs Forward Current Derating Curve Maximum Peak Forward Surge Current 3 120 Resistive or 100 Inductive Load 8.3 ms Single Half PCB Mounted on Sine-Wave 2 5.0 x 5.0 mm 80 (0.2 x 0.2 inch) (JEDEC Method) Copper Pad Areas 60 1 40 CD214C-B320R, -B340R 20 CD214AC-B360R, -B3100R 0 0 0507090 110 130 150 010 100 Lead Temperature (C) Number of Cycles 60 Hz Typical Instantaneous Forward Characteristics Typical Reverse Characteristics 10 100 10 1 T = 100 C 1 J 0.1 0.10 0.01 T = 25 C J CD214C-B320R, -B340R CD214C-B360R CD214C-B3100R 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 020 40 60 80 100 Instantaneous Forward Voltage (Volts) Percent of Rated Peak Reverse Voltage (%) Typical Junction Capacitance 400 T = 25 C J f = 1.0 MHz V = 50 mVP-P sig 100 Specifications are subject to change without notice. 10 The device characteristics and parameters in this data sheet can and do vary in 0.1 1.0 10 100 different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Reverse Voltage (Volts) Instantaneous Forward Current (A) Junction Capacitance (pF) Average Forward Rectified Current (Amps) Instantaneous Reverse Current (mA) Peak Forward Surge Current (Amps)