Features Applications n Superior circuit protection n RS-485 interfaces n Overcurrent protection n Exposed sense and data lines n Blocks surges up to rated voltage limit n Factory automation n High-speed performance n Automotive battery management systems n Small SMT package n Protection modules and dongles n RoHS compliant* n Process control equipment n AEC-Q101 compliant** n Test and measurement equipment TBU-DB-Q Series - TBU High-Speed Protectors General Information The TBU-DB-Q Series of Bourns TBU products are low capacitance dual bidirectional high-speed protection components, constructed using MOSFET semiconductor technology, and designed to protect against faults caused by short circuits, overvoltage transients and faults in battery cells, up to rated limits. Line 1 I/O 1 3 Line 1 I/O The TBU high-speed protector placed in the system circuit will monitor the current with the MOSFET detection circuit triggering to provide an effective barrier behind which sensitive electronics will not be Line 2 I/O 6 4 Line 2 I/O exposed to large currents during transient events. The TBU device is provided in a surface mount DFN package and meets industry standard requirements TBU Device such as RoHS and Pb Free solder reflow profiles. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A Symbol Parameter Value Unit V Peak impulse voltage withstand with duration less than 10 ms 550 V imp V Peak DC voltage withstand with duration less than 1 hour 450 V dc T Operating temperature range -55 to +125 C op T Storage temperature range -65 to +150 C stg T Maximum Ambient Temperature +125 C amax Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Symbol Parameter Min. Typ. Max. Unit Current required for the device to go from operating state to I 100 150 200 mA trigger protected state R Series resistance of the TBU device 10.5 13.5 16.5 device R Package resistance matching of the TBU device 1 - TBU device 2 0.5 match t Time taken for the device to go into current limiting 1 s block I Current through the triggered TBU device with 50 Vdc circuit voltage 0.5 mA Q Voltage below which the triggered TBU V 4.5 7.5 9.5 V reset device will transition to normal operating state R Junction to package pads - FR4 using JESD51-3 board 125 C/W th(j-a) R Junction to package pads - FR4 using JESD51-7 board 50 C/W th(j-a) Environmental Characteristics Parameter Value Moisture Sensitivity Level 1 ESD Classification (HBM) 1B * RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. **Q part number suffix for automotive and other applications requiring appropriate AEC-Q101 compliance. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document,www.bourns.com/docs/legal/disclaimer.pdf and at . *RoHS COMPLIANT VERSIONS AVAILABLE *RoHS COMPLIANT LEAD FREE LEAD FREE VERSIONS ARE RoHS COMPLIANT* *RoHS & **AEC-Q101 COMPLIANT *RoHS COMPLIANT AEC APPROVED (Select Models) TBU-DB-Q Series - TBU High-Speed Protectors Reference Application Basic TBU Operation The TBU devices are general use protectors used in a wide The TBU device, constructed using MOSFET semiconductor variety of applications, including telecommunications, industrial technology, placed in the system circuit will monitor the communications and automotive battery management systems. current with the MOSFET detection circuit triggering to provide The maximum voltage rating of the TBU device should never an effective barrier behind which sensitive electronics are not be exceeded. Where necessary, an OVP device should be em- exposed to large voltages or currents during transient events. ployed to limit the maximum voltage. A cost-effective protection When operated, the TBU device will limit the current to less solution combines Bourns TBU protection devices with a pair than the I value within the t duration. If voltage trigger block of Bourns TISP Overvoltage Protectors or MOVs. For band- above V is continuously sustained, the TBU device will reset width sensitive applications, a Bourns GDT may be substituted subsequently reduce the current to a quiescent current level for the MOV. within a period of time that is dependent upon the applied voltage. 1 3 After the surge, the TBU device resets when the voltage OVP across the TBU device falls to the V level. The TBU reset Line Load device will automatically reset on lines which have no DC bias Side OVP 6 4 or have DC bias below V (such as unpowered signal lines). reset TBU Device Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document,www.bourns.com/docs/legal/disclaimer.pdf and at .