TBU-DF085-200-WH Bourns

F5530 91630 Features n Superior circuit protection n Overcurrent protection n Blocks surges up to rated voltage limit n High-speed performance n Small SMT package n RoHS compliant* TBU-DF Series - TBU High-Speed Protectors General Information The TBU-DF Series of Bourns TBU products are low capacitance dual bidirectional high-speed Electronic Current Limiters (ECLs), constructed using MOSFET semiconductor technology, and designed to protect against faults caused by short circuits, overvoltage transients and faults in battery cells, up to rated limits. Line 1 I/O 1 3 Line 1 I/O The TBU high-speed protector placed in the system circuit will monitor the current with the MOSFET detec- tion circuit triggering to provide an effective barrier behind which sensitive electronics will not be exposed to Line 2 I/O 6 4 Line 2 I/O large voltages or currents during transient events. TBU Device The TBU device is provided in a surface mount DFN package and meets industry standard requirements such as RoHS and Pb Free solder reflow profiles. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A Symbol Parameter Part Number Value Unit TBU-DF055-xxx-WH 550 V Peak impulse voltage withstand with duration less than 10 ms V imp TBU-DF085-xxx-WH 850 TBU-DF055-xxx-WH 250 V Continuous A.C. RMS voltage V rms TBU-DF085-xxx-WH 425 T Operating temperature range -55 to +125 C op T Storage temperature range -65 to +150 C stg T Maximum Ambient Temperature +125 C amax Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Symbol Parameter Part Number Min. Typ. Max. Unit TBU-DFxxx-050-WH 50 75 100 TBU-DFxxx-100-WH 100 150 200 Current required for the device to go from operating state to I TBU-DFxxx-200-WH 200 300 400 mA trigger protected state TBU-DFxxx-300-WH 300 450 600 TBU-DFxxx-500-WH 500 750 1000 V = 550 V I (min.) = 50 mA TBU-DF055-050-WH 12 26 imp trigger V = 550 V I (min.) = 100 mA TBU-DF055-100-WH 9.5 18.5 imp trigger V = 550 V I (min.) = 200 mA TBU-DF055-200-WH 7.5 15.5 imp trigger V = 550 V I (min.) = 300 mA TBU-DF055-300-WH 6 14 imp trigger V = 550 V I (min.) = 500 mA TBU-DF055-500-WH 5 13 imp trigger Series resistance of R device the TBU device V = 850 V I (min.) = 50 mA TBU-DF085-050-WH 23 38 imp trigger V = 850 V I (min.) = 100 mA TBU-DF085-100-WH 14.5 26.5 imp trigger V = 850 V I (min.) = 200 mA TBU-DF085-200-WH 12.5 22.5 imp trigger V = 850 V I (min.) = 300 mA TBU-DF085-300-WH 15 26 imp trigger V = 850 V I (min.) = 500 mA TBU-DF085-500-WH 12 25 imp trigger R Package resistance matching of the TBU device 1 - TBU device 2 +0.5 match t Time for the device to go from normal operating state to protected state 1 s block I Current through the triggered TBU device with 50 Vdc circuit voltage 0.5 mA Q V Voltage below which the triggered TBU device will transition to normal operating state 12 16 20 V reset R Junction to ambient - FR4 using JESD51-3 board 125 C/W th(j-a) R Junction to ambient - FR4 using JESD51-7 board 50 C/W th(j-a) WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TBU-DF Series - TBU High-Speed Protectors Environmental Characteristics Parameter Value Moisture Sensitivity Level 1 ESD Classification (HBM) 1B Reference Application Basic TBU Operation The TBU devices are general use protectors used in a wide The TBU device, constructed using MOSFET semiconductor variety of applications, including telecommunications, industrial technology, placed in the system circuit will monitor the communications and automotive battery management systems. current with the MOSFET detection circuit triggering to provide The maximum voltage rating of the TBU device should never an effective barrier behind which sensitive electronics are not be exceeded. Where necessary, an OVP device should be exposed to large voltages or currents during transient events. employed to limit the maximum voltage. A cost-effective protection When operated, the TBU device will limit the current to less solution combines Bourns TBU protection devices with a pair than the I value within the t duration. If voltage trigger block of Bourns TISP Overvoltage Protectors or MOVs. For band- above V is continuously sustained, the TBU device will reset width sensitive applications, a Bourns GDT may be substituted subsequently reduce the current to a quiescent current level for the MOV. within a period of time that is dependent upon the applied voltage. 1 3 After the surge, the TBU device resets when the voltage OVP Line across the TBU device falls to the V level. The TBU reset Load Side device will automatically reset on lines which have no DC bias OVP 6 4 or have DC bias below V (such as unpowered signal lines). reset TBU Device Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.