TIC216M-S Bourns

TIC216 SERIES SILICON TRIACS Sensitive Gate Triacs TO-220 PACKAGE (TOP VIEW) 6 A RMS MT1 1 Glass Passivated Wafer MT2 2 400 V to 800 V Off-State Voltage G 3 Max I of 5 mA (Quadrants 1 - 3) GT Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC216D 400 TIC216M 600 Repetitive peak off-state voltage (see Note 1) V V DRM TIC216S 700 TIC216N 800 Full-cycle RMS on-state current at (or below) 70C case temperature (see Note 2) I 6 A T(RMS) Peak on-state surge current full-sine-waveat (or below) 25C case temperature (see Note 3) I 60 A TSM Peak gate current I 1 A GM Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) P 2.2 W GM Average gate power dissipation at (or below) 85C case temperature (see Note 4) P 0.9 W G(AV) Operating case temperature range T -40 to +110 C C Storage temperature range T -40 to +125 C stg Lead temperature 1.6 mm from case for 10 seconds T 230 C L NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70C derate linearly to 110C case temperature at the rate of 150 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Repetitive peak I V = rated V I = 0 T = 110C 2 mA DRM D DRM G C off-state current V = +12 V R = 10 t > 20 s 5 supply L p(g) Gate trigger V = +12 V R = 10 t > 20 s -5 supply L p(g) I mA GT current V = -12 V R = 10 t > 20 s -5 supply L p(g) V = -12 V R = 10 t > 20 s 10 supply L p(g) All voltages are with respect to Main Terminal 1. DECEMBER 1971 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.TIC216 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V = +12 V R = 10 t > 20 s 2.2 supply L p(g) Gate trigger V = +12 V R = 10 t > 20 s -2.2 supply L p(g) V V GT voltage V = -12 V R = 10 t > 20 s -2.2 supply L p(g) V = -12 V R = 10 t > 20 s 3 supply L p(g) V On-state voltage I = 8.4 A I = 50 mA (see Note 5) 1.7 V T T G V = +12 V I = 0 Init I = 100 mA 30 supply G TM I Holding current mA H V = -12 V I = 0 Init I = -100 mA -30 supply G TM V = +12 V 4 supply I Latching current (see Note 6) mA L V = -12 V -2 supply Critical rate of rise of dv/dt V = Rated V I = 0 T = 110C 20 V/s DRM DRM G C off-state voltage Critical rise of dv/dt V = Rated V I = 8.4 A T = 70C 2 5 V/s (c) DRM DRM TRM C commutation voltage All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from p the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R = 100 , t = 20 s, t = 15 ns, f = 1 kHz. G p(g) r thermal characteristics PARAMETER MIN TYP MAX UNIT R Junction to case thermal resistance 2.5 C/W JC R Junction to free air thermal resistance 62.5 C/W JA DECEMBER 1971 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.