TIC263M Bourns

TIC263 SERIES SILICON TRIACS High Current Triacs SOT-93 PACKAGE (TOP VIEW) 25 A RMS MT1 1 Glass Passivated Wafer 400 V to 800 V Off-State Voltage 2 MT2 175 A Peak Current 3 G Max I of 50 mA (Quadrants 1 - 3) GT Pin 2 is in electrical contact with the mounting base. MDC2ADA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC263D 400 TIC263M 600 Repetitive peak off-state voltage (see Note 1) V V DRM TIC263S 700 TIC263N 800 Full-cycle RMS on-state current at (or below) 60C case temperature (see Note 2) I 25 A T(RMS) Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) I 175 A TSM Peak gate current I 1 A GM Operating case temperature range T -40 to +110 C C Storage temperature range T -40 to +125 C stg Lead temperature 1.6 mm from case for 10 seconds T 230 C L NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60C derate linearly to 110C case temperature at the rate of 500mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Repetitive peak I V = Rated V I = 0 T = 110C 2 mA DRM D DRM G C off-state current V = +12 V R = 10 t > 20 s 15 50 supply L p(g) Gate trigger V = +12 V R = 10 t > 20 s -30 -50 supply L p(g) I mA GT current V = -12 V R = 10 t > 20 s -20 -50 supply L p(g) V = -12 V R = 10 t > 20 s 32 supply L p(g) V = +12 V R = 10 t > 20 s 0.8 2 supply L p(g) Gate trigger V = +12 V R = 10 t > 20 s -0.8 -2 supply L p(g) V V GT voltage V = -12 V R = 10 t > 20 s -0.8 -2 supply L p(g) V = -12 V R = 10 t > 20 s 0.8 2 supply L p(g) V On-state voltage I = 35.2 A I = 50 mA (see Note 4) 1.5 1.7 V T T G All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, t = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from p the current carrying contacts are located within 3.2 mm from the device body. DECEMBER 1971 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.TIC263 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V = +12 V I = 0 Init I = 100 mA 20 40 supply G T I Holding current mA H V = -12 V I = 0 Init I = -100 mA -10 -40 supply G T V = +12 V 20 supply I Latching current (see Note 5) mA L V = -12 V -20 supply Critical rate of rise of dv/dt V = Rated V I = 0 T = 110C 450 V/s D D G C off-state voltage Critical rise of V = Rated V T = 80C D D C dv/dt 1 V/s (c) commutation voltage di/dt = 0.5 I /ms I = 1.4 I T(RMS) T T(RMS) Critical rate of rise of V = Rated V D D di/dt I = 50 mA T = 110C 100 A/s GT C on -state current di /dt = 50 mA/s G All voltages are with respect to Main Terminal 1. NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R = 100 , t = 20 s, t = 15 ns, f = 1 kHz. G p(g) r thermal characteristics PARAMETER MIN TYP MAX UNIT R Junction to case thermal resistance 1.52 C/W JC R Junction to free air thermal resistance 36 C/W JA TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT GATE TRIGGER VOLTAGE vs vs CASE TEMPERATURE CASE TEMPERATURE TC10AA TC10AB 100 10 ALL QUADRANTS 10 1 V I supply GTM V = 12 V V = 12 V AA AA + + R = 10 R = 10 L + - L t = 20 s t = 20 s - - p(g) p(g) - + 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120 T - Case Temperature - C T - Case Temperature - C C C Figure 1. Figure 2. DECEMBER 1971 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice. I - Gate Trigger Current - mA GT V - Gate Trigger Voltage - V GT