TISP3072F3, TISP3082F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region D PACKAGE (TOP VIEW) Precise and Stable Voltage Low Voltage Overshoot under Surge 1 8 G T V V NC 2 7 G DRM (BO) DEVICE V V NC 3 6 G 3072F3 58 72 5 R 4 G 3082F3 66 82 NC - No internal connection Planar Passivated Junctions P PACKAGE Low Off-State Current < 10 A (TOP VIEW) Rated for International Surge Wave Shapes T 1 8 T I TSP 2 G 7 G WAVE SHAPE STANDARD A 3 G 6 G 2/10 s FCC Part 68 80 8/20 s ANSI C62.41 70 R 4 5 R 10/160 s FCC Part 68 60 Specified T terminal ratings require connection of pins 1 and 8. 10/560 s FCC Part 68 45 Specified R terminal ratings require connection of pins 4 and 5. 0.5/700 s RLM 88 38 FTZ R12 50 SL PACKAGE 10/700 s VDE 0433 50 (TOP VIEW) CCITT IX K17/K20 50 10/1000 s REA PE-60 35 1 T Surface Mount and Through-Hole Options G 2 PACKAGE PART SUFFIX R 3 Small-outline D Small-outline taped DR device symbo l and reeled Plastic DIP P Single-in-line SL T R UL Recognized, E132482 descriptio n These low voltage dual symmetrical transient voltage suppressor devices are designed to protect ISDN applications against transients caused by lightning strikes and a.c. power lines. G Offered in two voltage variants to meet battery Terminals T, R and G correspond to the and protection requirements they are guaranteed alternative line designators of A, B and C to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the These monolithic protection devices are voltage rises to the breakover level, which fabricated in ion-implanted planar structures to causes the device to crowbar. The high crowbar ensure precise and matched breakover control holding current prevents d.c. latchup as the and are virtually transparent to the system in current subsides. normal operation PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 SD3XAA MD23AA MDXXAG MDXXAF MDXXAETISP3072F3, TISP3082F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS MARCH 1994 - REVISED SEPTEMBER 1997 description (Continued ) The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings. absolute maximum rating s RATING SYMBOL VALUE UNIT 3072F3 58 Repetitive peak off-state voltage (0C < T < 70C) V V J DRM 3082F3 66 Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 1/2 s (Gas tube differential transient, open-circuit voltage wave shape 1/2 s) 120 2/10 s (FCC Part 68, open-circuit voltage wave shape 2/10 s) 80 8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s) 70 10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s) 60 5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s) I 50 A TSP 0.5/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s) 38 5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s) 50 5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s) 50 10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s) 45 10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s) 35 Non-repetitive peak on-state current (see Notes 2 and 3) D Package 4 50 Hz, 1 s P Package I 6 A rms TSM SL Package 6 Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A di /dt 250 A/s F Junction temperature T -40 to +150 C J Storage temperature range T -40 to +150 C stg NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section. 2. Initially the TISP must be in thermal equilibrium with 0C < T <70C. The surge may be repeated after the TISP returns to its initial J conditions. 3. Above 70C, derate linearly to zero at 150C lead temperature. electrical characteristics for the T and R terminals, T = 25C J TISP3072F3 TISP3082F3 PARAMETER TEST CONDITIONS UNIT MIN MAX MIN MAX Repetitive peak off- I V = 2V , 0C < T < 70C 10 10 A DRM D DRM J state current I Off-state current V = 50 V 10 10 A D D f = 100 kHz, V = 100 mV V = 0, D Package 50 150 50 150 d D C Off-state capacitance Third terminal voltage = -50 V to +50 V P Package 65 200 65 200 fF off (see Notes 4 and 5) SL Package 30 100 30 100 NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. 5. Further details on capacitance are given in the Applications Information section. Typical value of the parameter, not a limit value. electrical characteristics for the T and G or the R and G terminals, T = 25C J TISP3072F3 TISP3082F3 PARAMETER TEST CONDITIONS UNIT MIN MAX MIN MAX Repetitive peak off- I V = V , 0C < T < 70C 10 10 A DRM D DRM J state current PRODUCT INFORMATION 2