X-On Electronics has gained recognition as a prominent supplier of TISP4011H1BJR-S Thyristor Surge Protection Devices - TSPD across the USA, India, Europe, Australia, and various other global locations. TISP4011H1BJR-S Thyristor Surge Protection Devices - TSPD are a product manufactured by Bourns. We provide cost-effective solutions for Thyristor Surge Protection Devices - TSPD, ensuring timely deliveries around the world.

TISP4011H1BJR-S Bourns

TISP4011H1BJR-S electronic component of Bourns
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Part No.TISP4011H1BJR-S
Manufacturer: Bourns
Category: Thyristor Surge Protection Devices - TSPD
Description: Thyristor Surge Protection Devices - TSPD Very Low Volt Bidirectional
Datasheet: TISP4011H1BJR-S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9482 ea
Line Total: USD 0.95 
Availability - 9281
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9281
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9482
10 : USD 0.6292
100 : USD 0.4543
500 : USD 0.3839
1000 : USD 0.3575
3000 : USD 0.3366
6000 : USD 0.3322
9000 : USD 0.3278
24000 : USD 0.319

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Breakover Voltage VBO
Breakover Current IBO Max
Rated Repetitive Off-State Voltage VDRM
Holding Current Ih Max
Off-State Capacitance CO
Mounting Style
Package / Case
Packaging
Current Rating
Off-State Leakage Current Vdrm Idrm
Product
Series
Brand
On-State Rms Current - It Rms
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TISP4011H1BJR-S from our Thyristor Surge Protection Devices - TSPD category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TISP4011H1BJR-S and other electronic components in the Thyristor Surge Protection Devices - TSPD category and beyond.

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TISP4011H1BJ VERY LOW VOLTAGE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4011H1BJ VLV Overvoltage Protector Series General Information SMB Package (Top View) The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low- R(B) 12 T(A) voltage on-state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value. MDXXBGE Agency Recognition Device Symbol Description T UL File Number: E215609 SD4XAA R Terminals T and R correspond to the alternative line designators of A and B Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit Repetitive peak off-state voltage V 5.25 V DRM Non-repetitive peak on-state pulse current 10/1000 s I 100 A PPSM 2/10 s 500 Junction temperature T -40 to +150 C J Storage temperature T -55 to +150 C stg Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A Parameter Test Conditions Min. Typ. Max. Unit I Leakage currentD V = V 1 200 A D DRM V Breakover voltage(BO) di/dt = 1 mA/s 9 10.5 V I Breakover current(BO) di/dt = 1 mA/s 75 200 mA V On-state voltageT I = 5 A 3 V T I Holding current I = 5 A, di/dt = 1 mA/s 20 60 mA H T C Ofoff f-state capacitance V = 0 V, f = 1 MHz, 1 Vrms 110 pF d OCTOBER 2016 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. WARNING Cancer and Reproductive Harm The products described herein and this document are subject to specific legal disclaimers as set forth on the last www.P65Warnings.ca.gov page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4011H1BJ VLV Overvoltage Protector Series Parameter Measurement Information Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal How to Order Device Package Carrier Order as TISP4011H1BJ BJ (SMB/DO-214AA J-Bend) R (Embossed Tape Reeled) TISP4011H1BJR-S Carrier Information For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. Package Carrier Standard Quantity SMB Embossed Tape Reel Pack 3000 Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus bourns.com Europe: Tel: +36 88 885 877 Email: eurocus bourns.com The Americas: Tel: +1-951 781-5500 Email: americus bourns.com www.bourns.com OCTOBER 2016 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Bourns Inc.
BOURNS JW MILLER
BR4
J.W. Miller
JW Miller
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