TISP4070J1BJR-S Bourns

TISP4070J1BJ THRU TISP4395J1BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxJ1BJ Overvoltage Protector Series Ground Return Element of Y Configuration SMB Package (Top View) -2x Current Capability of Y Upper Elements -Available in a Wide Range of Voltages -Enables Symmetrical and Asymmetrical Y Designs -SMB (DO-214AA) Package MT112 MT2 Ion-Implanted Breakdown Region -Precise and Stable Voltage MD4JAA -Low Voltage Overshoot Under Surge Device Symbol V V DRM (BO) Device MT2 V V TISP4070J1 58 70 TISP4080J1 65 80 TISP4095J1 75 95 TISP4115J1 90 115 TISP4125J1 100 125 TISP4145J1 120 145 MT1 SD4JAA TISP4165J1 135 165 Rated for International Surge Wave Shapes TISP4180J1 145 180 I TISP4200J1 155 200 PPSM Wave Shape Standard TISP4219J1 180 219 A TISP4250J1 190 250 2/10 GR-1089-CORE 1000 TISP4290J1 220 290 8/20 IEC 61000-4-5 800 TISP4350J1 275 350 10/160 TIA/EIA-IS-968 (FCC Part 68) 400 TISP4395J1 320 395 10/700 ITU-T K.20/21/45 350 10/560 TIA/EIA-IS-968 (FCC Part 68) 250 10/1000 GR-1089-CORE 200 ............................................ UL Recognized Components Description The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example, the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the Applications Information section. These SMB package combinations are often more space efficient than single package Y protection multi-chip integrations. These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, V , see Figure 1. Voltages above V are DRM DRM limited and will not exceed the breakover voltage, V , level. If sufficient current flows due to the overvoltage, the device switches into a low- (BO) voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, I , level the devices switches off and restores normal system operation. H How to Order Order As Device Package Carrier TISP 4xxxJ1BJ B J (SMB/D O - 214AA J-Bend) R (Embossed Tape Re eled) TISP4xxxJ1BJR-S *RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 2001 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. *RoHS COMPLIANT TISP4xxxJ1BJ Overvoltage Protector Series Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4070 58 4080 65 4095 75 4115 90 4125 100 4145 120 4165 135 Repetitive peak off-state voltage V V DRM 4180 145 4200 155 4219 180 4250 190 4290 220 4350 275 4395 320 Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1000 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape) 800 10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape) 400 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) I 370 A PPSM 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 350 5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single) 350 10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape) 250 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 200 Non-repetitive peak on-state current (see Notes 1 and 2) I 80 A 50 Hz, 1 cycle TSM 100 60 Hz, 1 cycle Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A di /dt 800 A/s T Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. Initially, the device must be in thermal equilibrium with T =25 C. J 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions. Recommended Operating Conditions Component Min Typ Max Unit Series resistor for GR-1089-CORE first-level surge survival 0 Series resistor for ITU-T recommendation K.20/K.45/K.21 (Basic coordi nation with 400 V GDT) 6.5 R1, R2 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 survival 0 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 survival 0 Series resistor for TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 survival 0 SEPTEMBER 2001 - REVISED JANUARY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.