TISP4070L3AJ THRU TISP4395L3AJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxL3AJ Overvoltage Protector Series SMA (DO-214AC) Package Agency Recognition 25% Smaller Placement Area than SMB Description Ion-Implanted Breakdown Region Precise and Stable Voltage UL File Number: E215609 V V DRM (BO) Device V V SMAJ Package (Top View) 4070 58 70 4080 65 80 R (B) 12 T (A) 4090 70 90 4125 100 125 4145 120 145 MDXXCCE 4165 135 165 Device Symbol 4180 145 180 T 4220 160 220 4240 180 240 4260 200 260 4290 230 290 4320 240 320 SD4XAA 4350 275 350 R 4360 290 360 erminals T and R correspond to the T 4395 320 395 alternative line designators of A and B Rated for International Surge Wave Shapes ................................................. UL Recognized Components I TSP Wave Shape Standard A 2/10 s GR-1089-CORE 125 8/20 s IEC 61000-4-5 100 10/160 s FCC Part 68 65 10/700 s ITU-T K.20/21/45 50 10/560 s FCC Part 68 40 10/1000 s GR-1089-CORE 30 How to Order DevicePackage Carrier Order As TISP4xxxL3AJ SMA (DO-214AC) Embossed Tape Reel PackTISP4xxxL3AJR-S Insert xxx value corresponding to protection voltages of 070, 080, 090, etc. JULY 2000 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. WARNING Cancer and Reproductive Harm The products described herein and this document are subject to specific legal disclaimers as set forth on the last www.P65Warnings.ca.gov page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4xxxL3AJ Overvoltage Protector Series Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They ar e guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ (JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100 A 10/1000 TISP4xxxH3BJ series in SMB are available. Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4070 58 4080 65 4090 70 4125 100 4145 120 4165 135 4180 145 Repetitive peak off-state voltage, (see Note 1) 4220 V 160 V DRM 4240 180 4260 200 4290 230 4320 240 4350 275 4360 290 4395 320 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 125 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 100 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 65 I A TSP 5/310 s (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape) 50 5/310 s (FTZ R12, 10/700 s voltage wave shape) 50 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 40 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 30 Non-repetitive peak on-state current (see Notes 2, 3 and 4) 20 ms (50 Hz) full sine wave 18 1 s (50 Hz) full sine wave I 7 A TSM 1000 s 50 Hz/60 Hz a.c. 1.6 Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/C. 2. Initially, the TISP4xxxL3 must be in thermal equilibrium with T =25 C J 3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions. 4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C. JULY 2000 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.