TISP4290T3BJ, TISP4350T3BJ, TISP4400T3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxT3BJ Overvoltage Protector Series MODEM Protection against: SMB Package (Top View) -TIA/EIA-IS-968 Type A & B surge -UL 60950, Clause 6. power cross -CSA 22.2 No. 60950, Clause 6. power cross RT12 Low Differential Capacitance ................................... 23 pF typ. Ion-Implanted Breakdown Region -Precise and Stable Voltage MDXXCM -Low Voltage Overshoot Under Surge V V DRM (BO) Device Device Symbol V V 4290T3 220 290 T 4350T3 275 350 4400T3 335 400 Rated for International Surge Wave Shapes I PPSM Wave Shape Standard SD4XAA A R 2/10 GR-1089-CORE 250 8/20 IEC 61000-4-5 250 10/160 TIA/EIA-IS-968 150 10/700 ITU-T K.20/.21/.45 120 .............................................. UL Recognized Component 9/720 TIA/EIA-IS-968 120 10/560 TIA/EIA-IS-968 100 10/1000 GR-1089-CORE 80 How to Order Device Package Carrier Order As TISP4xxxT3BJ BJ (SMB/DO-214AA J-Bend) R (Embossed Tape Reeled) TISP4xxxT3BJR-S Description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed lightning surges in both polarities. After a TIA/EIA-IS-968 (replaces FCC Part 68) Type A surge the equipment can be faulty, provided that the fault mode causes the equipment to be unusable. There are two wave shapes used: 10/160 for longitudinal surges and 10/560 for metallic surges. For modems with a TISP4350T3BJ connected between the Ring and Tip wires (and without overvoltage protection to ground), the longitudinal 10/160 applied to both Ring and Tip will not activate the TISP4350T3BJ, giving an operational pass. The metallic 10/560 is applied between Ring and Tip wires and will operate the TISP4350T3BJ. As the TISP4350T3BJ has a current rating of 100 A, 10/560 it will survive the FCC Part Type A 100 A, 10/560 metallic surge giving an operational pass. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex DECEMBER 2001 - REVISED MAY 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. *RoHS COMPLIANT TISP4xxxT3BJ Overvoltage Protector Series Description (Continued) After a TIA/EIA-IS-968 Type B surge the equipment must be operational. As the TISP4350T3BJ has a current rating of 120 A, it will survive both Type B surges, metallic (25 A, 9/720) and longitudinal (37.5 A, 9/720), giving an operational pass to FCC Part 68 Type B surges. The TIA/EIA-IS-968 B type ringer has voltages of 56.5 V d.c. and up to 150 V rms a.c., giving a peak voltage of 269 V. The TISP4350T3BJ will not clip the B type ringing voltage as it has a high impedance up to 275 V. Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4290T3 220 Repetitive peak off-state voltage (see Note 1) V V 4350T3 DRM 275 4400T3 335 Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 250 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 250 10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 voltage wave shape) 150 I A PPSM 5/310 (ITU-T K.44, 10/700 voltage wave shape used in K.20/45/21) 120 5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 voltage wave shape) 120 10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 voltage wave shape) 100 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 80 Non-repetitive peak on-state current (see Notes 1, 2 and 3) 25 20 ms (50 Hz), full sine wave I A TSM 30 16.7 ms (60 Hz), full sine wave 2.1 1000 s 50 Hz/60 Hz Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A di /dt 500 A/s T Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. Initially, the device must be in thermal equilibrium with T =25 C. J 2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C. Overload Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit See Figure 4 Peak overload on-state current, a.c. power line cross tests UL 60950 (see Note 4) I for current A rms T(OV)M versus time NOTE 4: These electrical stress levels may damage the device silicon chip. After test, the pass criterion is either that the device is functional or, if it is faulty, that it has a short circuit fault mode. In the short circuit fault mode, the following equipment is protected as the device is a permanent short across the line. The equipment would be unprotected if an open circuit fault mode developed. DECEMBER 2001 - REVISED MAY 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.