TISP4400M3BJR-S Bourns

TISP4070M3BJ THRU TISP4115M3BJ, TISP4125M3BJ THRU TISP4220M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4xxxM3BJ Overvoltage Protector Series Agency Recognition ITU-T K.20/21/44/45 rating ............... 4 kV 10/700, 100 A 5/310 Description Ion-Implanted Breakdown Region Precise and Stable Voltage UL File Number: E215609 Low Voltage Overshoot under Surge V V DRM (BO) SMBJ Package (Top View) Device V V 4070 58 70 4080 65 80 12 T(A) R(B) 4095 75 95 4115 90 115 4125 100 125 MDXXBGE 4145 120 145 4165 135 165 Device Symbol 4180 145 180 T 4200 155 200 4220 160 220 4240 180 240 4250 190 250 4265 200 265 SD4XAA 4290 220 290 R 4300 230 300 4350 275 350 Terminals T and R correspond to the 4360 290 360 alternative line designators of A and B 4395 320 395 I 4400 300 400 TSP Wave Shape Standard A Low Differential Capacitance .................................... 39 pF max. 2/10 s GR-1089-CORE 300 ...............................................UL Recognized Component 8/20 s IEC 61000-4-5 220 10/160 s FCC Part 68 120 Description 10/700 s ITU-T K.20/21/45 100 These devices are designed to limit overvoltages on the telephone 10/560 s FCC Part 68 75 line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to 10/1000 s GR-1089-CORE 50 the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. How to Order Order As DevicePackage Carrier NOVEMBER 1997 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. TISP4xxxM3BJBJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled TISP4xxxM3BJR-S Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/ WARNING Cancer and Reproductive Harm legal/disclaimer.pdf. www.P65Warnings.ca.gov TISP4xxxM3BJ Overvoltage Protector Series Description (Continued) The TISP4xxxM3BJ range consists of nineteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ series is available. Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4070 58 4080 65 4095 75 4115 90 4125 100 4145 120 4165 135 4180 145 4200 155 Repetitive peak off-state voltage, (see Note 1) 4220 V 160 V DRM 4240 180 4250 190 4265 200 4290 220 4300 230 4350 275 4360 290 4395 320 4400 300 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 300 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 120 5/200 s (VDE 0433, 10/700 s voltage wave shape) 110 I A TSP 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 100 5/310 (ITU-T K.20/21/45, K.44 10/700 s voltage wave shape) 100 5/310 s (FTZ R12, 10/700 s voltage wave shape) 100 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 75 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 50 Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 30 16.7 ms (60 Hz) full sine wave I 32 A TSM 1000 s 50 Hz/60 Hz a.c. 2.1 Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A di /dt 300 A/s T Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. See Applications Information and Figure 11 for voltage values at lower temperatures. 2. Initially, the TISP4xxxM3BJ must be in thermal equilibrium with T =25 C. J 3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions. 4. See Applications Information and Figure 12 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 9 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C. NOVEMBER 1997 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.