TISP4C015L1N THRU TISP4C035L1N LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR This series is currently available, but is not recommended for new designs. The Model TISP4P0xxL1N Series is the recommended pin-to-pin replacement. TISP4C0xxL1N Overvoltage Protector Series SOT23-5 Package (Top View) Designed for ADSL, ADSL2, VDSL, VDSL2 protection Ion-Implanted Breakdown Region (Tip) 1 5)(Tip - Precise and Stable Voltage Low Voltage Overshoot Under Surge NU 2 Low Off-State Capacitance (Ring) 34 (Ring) V V DRM (BO) Device Name V V TISP4C015L1N 8 15 Terminal typical application names TISP4C020L1N 12 20 shown in parenthesis. NU - Non-usable no external electrical TISP4C025L1N 16 25 connection should be made to this terminal. TISP4C035L1N 24 35 MD-SOT23-5-001-a Rated for International Surge Wave Shapes Device Symbol I PPSM Wave Shape Standard A (Tip) 8/20 IEC 61000-4-5 30 10/1000 GR-1089-CORE 18 Description This range of devices is designed to protect xDSL line-driver interfaces from overvoltages. Overvoltages are normally caused (Ring) by a.c. power-system or lightning- ash disturbances which are induced or conducted onto the telephone line. These symmetrical SD-TISP4-002-a protectors are two-terminal thyristor-crowbar devices. They can be used to protect between conductors, or a pair of devices can be deployed to protect from line to ground. When placed between the xDSL line driver IC and the transformer, this protector will clamp and switch into a low-impedance state, safely diverting the energy transferred by the xDSL coupling transformer. The low capacitance design makes this device suitable for designs from ADSL all the way up to 30 MHz VDSL2. Telecom ports need protection against Common Mode (Longitudinal) and Differential (Metallic) surges, to comply with international standards such as ITU-T K.20, K.21 or K.45, Telcordia GR-1089-CORE and YD/T. Common Mode surges are resisted by the galvanic isolation of the coupling transformer which is commonly rated to 2 kV or greater. Differential surges can be transmitted by the transformer, and can stress the Line Driver Interface IC. As the xDSL interface circuit is designed to operate from 3 kHz to to 30 MHz, nearby high frequency events - such as cable ashover or primary protection activation - can generate damaging conditions for the interface requiring this type of protection. Please contact your Bourns representative if the protection voltage you require is not listed. How to Order Device Package Carrier Order As Marking Code Reel Quantity TISP4C0xxL1N SOT23-5 Embossed Tape Reeled TISP4C0xxL1NR-S Cxx 10000 Insert xx corresponding to device name. JULY 2008 - REVISED NOVEMBER 2015 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Speci cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their speci c applications. *RoHS COMPLIANT TISP4C0xxL1N Overvoltage Protector Series Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4C015L1N 8 4C020L1N 12 V Repetitive peak off-state voltage DRM V 4C025L1N 16 4C035L1N 24 Non-repetitive peak impulse current (see Notes 1, 2 and 3) I PPSM 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 30 A 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 18 Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. Initially the device must be in thermal equilibrium with T = 25 C. J 2. The surge may be repeated after the device returns to its initial conditions. 3. Rated currents only apply if pins 1 & 5 (Tip) are connected together and pins 3 & 4 (Ring) are connected together. Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A Parameter Test Conditions Min Typ Max Unit I Repetitive peak off-state current V = V 1 A DRM D DRM 4C015L1N 15 4C020L1N 20 V V Breakover voltage dv/dt = 250 V/ms, R = 300 (BO) SOURCE 4C025L1N 25 4C035L1N 35 50 4C015L1N 4C020L1N 20 I Holding current I = 5 A, di/dt = 30 mA/ms mA H T 4C025L1N 50 4C035L1N 50 4C015L1N 15 4C020L1N 15 C Off-state capacitance f = 1 MHz, V = 1 V rms, V = 2 V pF O d D 4C025L1N 15 4C035L1N 15 4C015L1N 3 4C020L1N 3.5 C Delta-capacitance f = 1 MHz, V = 1 V rms, V = 1 V to V pF d D DRM 4C025L1N 3.5 4C035L1N 4.5 JULY 2008 - REVISED NOVEMBER 2015 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Speci cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their speci c applications.