Features Applications Low capacitance G.Fast equipment Low distortion xDSL modems and line cards Surge protection RoHS compliant* TISP4G024L1W G.Fast VDSL Protector General Information This device is designed to protect ADSL, VDSL and G.Fast line driver interfaces from overvoltages up to rated limits. Overvoltages are normally caused by a.c. power-system I/O 1 REF or lightning- ash disturbances which are induced or conducted onto the telephone line. This protector offers protection of both lines of the twisted wire pair in a single device. When placed between the xDSL line driver IC and the transformer, this protector will GND REF clamp and switch into a low-impedance state, safely diverting the current transferred by the xDSL coupling transformer. The biased low capacitance design makes this device suitable for designs from ADSL to 30MHz VDSL2 to G.Fast. I/O 2 REF Telecom ports need protection against longitudinal and transverse surges, to comply with international standards such as ITU-T K.20, K.21 or K.45, Telcordia GR-1089-CORE and YD/T. Longitudinal surges are resisted by the galvanic isolation of the coupling transformer which is commonly rated to 2 kV or greater. Transverse surges can be transmitted by the transformer, and can stress the Line Driver Interface IC. As the xDSL interface circuit is designed to operate from 3 kHz to 106 MHz, nearby high frequency events such as cable ashover or primary protection activation can generate damaging conditions for the interface requiring this type of protection. Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Rating Unit Repetitive Peak Off-State Voltage V 24 V DRM Non-repetitive Peak Impulse Current, 8/20 s I A 30 PPSM ESD (IEC 61000-4-2 Contact) 8kV ESD (IEC 61000-4-2 Air) 15 kV Junction Temperature T -40 to +150 C J Storage Temperature T -55 to +150 C STG Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A Parameter Test Condition (Note 1) Min. Typ. Max. Unit I Leakage Current V = V 100 nA D D DRM V Breakover Voltage di/dt = 1 mA/s 30 34 V (BO) I di/dt = 1 mA/s 80 mA (BO) Breakover Current V On-state Voltage I = 1 A 3.8 V T T V On-state Voltage I = 1 A, REF to GND 1 V T T I Holding Current I = 5 A di/dt = 1 mA/s 40 mA H T C Capacitance V = 2 V, f = 10 MHz, V =1 Vrms 0.4 3 pF D d C Capacitance Variation V = 1 V to V , f = 10 MHz, V =1 Vrms 0.02 pF D DRM d Note 1: All measurements made between I/O 1 and I/O 2 unless otherwise stated. OCTOBER 2015 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Speci cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their speci c applications. *RoHS COMPLIANT TISP4G024L1W G.Fast VDSL Protector Parameter Measurement Information +i Quadrant I I PPSM Switching Characteristic I TSM V (BO) I (BO) I H V (BR) I (BR) V I D D +v -v I V D D I (BR) V (BR) I H I (BO) V (BO) I TSM Quadrant III I Switching PPSM Characteristic -i PM4XAD Figure 1. Voltage-current Characteristic for I/O 1 to I/O 2 OCTOBER 2015 Speci cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their speci c applications.