Y1801L TISP4P015L1N THRU TISP4P035L1N LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR TISP4P0xxL1N Overvoltage Protector Series Designed for ADSL, ADSL2, VDSL, VDSL2 protection SOT23-5 Package (Top View) Ion-Implanted Breakdown Region - Precise and Stable Voltage (Tip) 1 5)(Tip Low Voltage Overshoot Under Surge NU 2 Low Off-State Capacitance (Ring) 34 (Ring) V V DRM (BO) Device Name V V TISP4P015L1N 815 Terminal typical application names TISP4P020L1N 12 20 shown in parenthesis. TISP4P025L1N 16 25 NU - Non-usable no external electrical connection should be made to this terminal. 35 TISP4P035L1N 24 MD-SOT23-5-001-a Rated for International Surge Wave Shapes Device Symbol I PPSM (Tip) Wave ShapeStandard A 8/20 IEC 61000-4-5 30 10/1000 GR-1089-CORE 18 Description This range of devices is designed to protect xDSL line-driver interfaces from overvoltages up to rated limits. Overvoltages are (Ring) normally caused by a.c. power-system or lightning-flash disturbances which are induced or conducted onto the telephone SD-TISP4-002-a line. These symmetrical protectors are two-terminal thyristor- crowbar devices. They can be used to protect between conductors, or a pair of devices can be deployed to protect from line to ground. When placed between the xDSL line driver IC and the transformer, this protector will clamp and switch into a low-impedance state, safely diverting the energy transferred by the xDSL coupling transformer. The low capacitance design makes this device suitable for designs from ADSL all the way up to 30 MHz VDSL2. Telecom ports need protection against Common Mode (Longitudinal) and Differential (Metallic) surges, to comply with international standards such as ITU-T K.20, K.21 or K.45, Telcordia GR-1089-CORE and YD/T. Common Mode surges are resisted by the galvanic isolation of the coupling transformer which is commonly rated to 2 kV or greater. Differential surges can be transmitted by the transformer, and can stress the Line Driver Interface IC. As the xDSL interface circuit is designed to operate from 3 kHz to to 30 MHz, nearby high frequency events - such as cable flashover or primary protection activation - can generate damaging conditions for the interface requiring this type of protection. Please contact your Bourns representative if the protection voltage you require is not listed. How to Order Agency Recognition Device Package Carrier Order As Reel Quantity Description TISP4P0xxxL1N SOT23-5 Embossed Tape Reeled TISP4P0xxL1NR-S 10,000 UL File Number: E215609 Insert xx corresponding to device name. OCTOBER 2009 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. WARNING Cancer and Reproductive Harm The products described herein and this document are subject to specific legal disclaimers as set forth on the last www.P65Warnings.ca.gov page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP4P0xxL1N Overvoltage Protector Series Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 4P015L1N 8 4P020L1N 12 V Repetitive peak off-state voltage DRM V 4P025L1N 16 4P035L1N 24 Non-repetitive peak impulse current (see Notes 1, 2 and 3) I 8/20s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) PPSM 30 A 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 18 Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. Initially the device must be in thermal equilibrium with T = 25 C. J 2. The surge may be repeated after the device returns to its initial conditions. 3. Rated currents only apply if pins 1 & 5 (Tip) are connected together and pins 3 & 4 (Ring) are connected together. Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A Parameter Test Conditions Min Typ Max Unit I Repetitive peak off-state current V = V 1 A DRM D DRM 4P015L1N 15 4P020L1N 20 V Breakover voltagedv/dt =250 V/ms, R = 300 V (BO) SOURCE 4P025L1N 25 4P035L1N 35 4P015L1N 30 4P020L1N 10 I Holding current I = 5 A, di/dt = 30 mA/ms mA H T 4P025L1N 30 4P035L1N 30 4P015L1N 6.5 4P020L1N 6 C Off-state capacitance f = 1MHz, V = 1V rms, V = 2 V pF O d D 4P025L1N 5.5 4P035L1N 3.5 4P015L1N 2 4P020L1N 2.5 CDelta-capacitance f = 1MHz, V = 1V rms, V = 1 V to V pF d D DRM 4P025L1N 3 4P035L1N 2 Typical Part Marking Environmental Specifications Moisture Sensitivity Level ................................................................1 2-DIGIT PRODUCT CODE ESD Classification (HBM) ............................................................. 3B Y1 = TISP4P015L1NR Y2 = TISP4P020L1NR Y3 = TISP4P025L1NR Y4 = TISP4P035L1NR Y1YWWL MANUFACTURING DATE CODE: Y = YEAR WW = WEEK L = LOT CODE OCTOBER 2009 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.