TISP5110H3BJR-S Bourns

TISP5070H3BJ THRU TISP5190H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP5xxxH3BJ Overvoltage Protector Series Analogue Line Card and ISDN Protection Agency Recognition - Analogue SLIC Description - ISDN U Interface - ISDN Power Supply UL File Number: E215609 8 kV 10/700, 200 A 5/310 ITU-T K.20/21/45 rating Ion-Implanted Breakdown Region SMB Package (Top View) - Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) A 12 K Device Name V V TISP5070H3BJ-58 -70 MD5UFCAB TISP5080H3BJ-65 -80 TISP5095H3BJ-75 -95 Device Symbol TISP5110H3BJ-80 -110 TISP5115H3BJ-90 -115 K TISP5150H3BJ-120-150 TISP5190H3BJ-160-190 Rated for International Surge Wave Shapes I PPSM Wave Shape Standard A SD5XAD 2/10 GR-1089-CORE 500 A 8/20 ANSI C62.41 300 10/160TIA-968-A 250 ................................................ UL Recognized Component 10/700ITU-T K.20/21/45 200 10/560TIA-968-A 160 10/1000 GR-1089-CORE100 Description These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines. The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode. How to Order Marking Std. Order As Code Quantity Device PackageCarrier BJ (J-Bend Embossed TISP5xxxH3BJ TISP5xxxH3BJR-S 5xxxH3 3000 DO-214AA/SMB) Tape Reeled Insert xxx value corresponding to protection voltages of 070, 080, 110, 115 and 150. JANUARY 1998 REVISED JULY 2019 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. WARNING Cancer and Reproductive Harm The products described herein and this document are subject to specific legal disclaimers as set forth on the last www.P65Warnings.ca.gov page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. TISP5xxxH3BJ Overvoltage Protection Series Absolute Maximum Ratings, T = 25 C (Unless Otherwise Noted) A Rating Symbol Value Unit 5070H3BJ -58 5080H3BJ -65 -75 5095H3BJ Repetitive peak off-state voltage (see Note 1) 5110H3BJ V -80 V DRM 5115H3BJ -90 5150H3BJ -120 5190H3BJ -160 Non-repetitive peak impulse current (see Notes 2, 3 and 4) 500 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 300 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 s current combination wave generator) 250 10/160 s (TIA-968-A, 10/160 s voltage wave shape) 220 5/200 s (VDE 0433, 10/700 s voltage waveshape) I 200 A 0.2/310 s (I3124, 0.5/700 s waveshape) PPSM 200 5/310 s (ITU-T K.44, 10/700 s voltage waveshape used in K.20/21/45) 200 5/310 s (FTZ R12, 10/700 s voltage waveshape) 160 10/560 s (TIA-968-A, 10/560 s voltage wave shape) 100 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 55 20 ms, 50 Hz (full sine wave) I 60 A 16.7 ms, 60 Hz (full sine wave) TSM 2.1 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, GR-1089-CORE 2/10 s wave shape di /dt 400 A/s T Junction temperature T -40 to +150 C J Storage temperature range T -65 to +150 C stg NOTES: 1. See Figure 9 for voltage values at lower temperatures. 2. Initially the device must be in thermal equilibrium with T = 25 C. J 3. The surge may be repeated after the device returns to its initial conditions. 4. See Figure 10 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/ C for ambient temperatures above 25 C. See Figure 8 for current ratings at other durations. Electrical Characteristics, T = 25 C (Unless Otherwise Noted) A Parameter Test Conditions Min Typ Max Unit T = 25 C -5 A I Repetitive peak off-state current V = V A DRM D DRM T = 85 C -10 A 5070H3BJ -70 5080H3BJ -80 5095H3BJ -95 V Breakover voltage dv/dt = -250 V/ms, R = 300 5110H3BJ -110 V (BO) SOURCE 5115H3BJ -115 5150H3BJ -150 5190H3BJ -190 5070H3BJ -80 5080H3BJ -90 dv/dt -1000 V/s, Linear voltage ramp, 5095H3BJ -105 Maximum ramp value = -500 V V Impulse breakover voltage 5110H3BJ -120 V (BO) di/dt = -20 A/s, Linear current ramp, 5115H3BJ -125 Maximum ramp value = -10 A 5150H3BJ -160 5190H3BJ -200 JANUARY 1998 REVISED JULY 2019 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.