2N4351 Calogic

N-Channel Enhancement Mode MOSFET General Purpose CORPORATION Amplifier/Switch 2N4351 FEATURES ABSOLUTE MAXIMUM RATINGS o (T = 25 C unless otherwise noted) A Low ON Resistance Low Capacitance Drain-Source Voltage or Drain-Body Voltage 25V High Gain Peak Gate-Source Voltage (Note 1) . 125V High Gate Breakdown Voltage Drain Current 100mA o o Low Threshold Voltage Storage Temperature Range . -65 C to +200 C o o Operating Temperature Range . -55 C to +150 C o Lead Temperature (Soldering, 10sec) . +300 C PIN CONFIGURATION Power Dissipation 375mW o o Derate above 25 C 3mW/ C NOTE: Stresses above those listed underAbsolute Maximum Rating may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections TO-72 of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ORDERING INFORMATION Part Package Temperature Range o o 2N4351 Hermetic TO-72 -55 C to +150 C o o X2N4351 Sorted Chips in Carriers -55 C to +150 C C D S G 1003 o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) A SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS BVDSS Drain-Source Breakdown Voltage 25 V ID = 10A, VGS = 0 IGSS Gate Leakage Current 10 pA VGS = 30V, VDS = 0 IDSS Zero-Gate-Voltage Drain Current 10 nA VDS = 10V, VGS = 0 VGS(th) Gate-Source Threshold Voltage 1 5 V VDS = 10V, ID = 10A ID(on)O Drain Current 3 mA VGS = 10V, VDS = 10V VDS(on) Drain-SourceO Voltage 1 V ID = 2mA, VGS = 10V rDS(on) Drain-Source Resistance 300 ohms VGS = 10V, ID = 0, f = 1kHz yfs Forward Transfer Admittance 1000 SVDS = 10V, ID = 2mA, f = 1kHz Crss Reverse Transfer Capacitance (Note 2) 1.3 VDS = 0, VGS = 0, f = 1MHz pF Ciss Input Capacitance (Note 2) 5.0 VDS = 10V, VGS = 0, f = 1MHz Cd(sub) Drain-Substrate Capacitance (Note 2) 5.0 VD(SUB) = 10V, f = 1MHz td(on) Turn-On Delay (Note 2) 45 tr Rise Time (Note 2) 65 ns t Turn-Off Delay (Note 2) 60 d(off) tf Fall Time (Note 2) 100 NOTES: 1. Device must not be tested at 125V more than once or longer than 300ms. 2. For design reference only, not 100% tested.