X-On Electronics has gained recognition as a prominent supplier of NV4V31SF-A across the USA, India, Europe, Australia, and various other global locations. NV4V31SF-A are a product manufactured by CEL. We provide cost-effective solutions for NV4V31SF-A, ensuring timely deliveries around the world.

NV4V31SF-A CEL

NV4V31SF-A electronic component of CEL
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Part No.NV4V31SF-A
Manufacturer: CEL
Category: Unclassified
Description: LASER DIODE 405NM 175MW 5.6MM
Datasheet: NV4V31SF-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 550.1417 ea
Line Total: USD 550.14 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 550.1417

   
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RoHS - XON
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We are delighted to provide the NV4V31SF-A from our CEL manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NV4V31SF-A and other electronic components in the CEL manufacturer and beyond.

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A Business Partner of Renesas Electronics Corporation. Data Sheet NV4V31SF R08DS0070EJ0100 Rev.1.00 Blue-Violet Laser Diode Jun 20, 2013 405 nm Blue-Violet Laser Light Source DESCRIPTION The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW (CW). The NV4V31SF can provide excellent linearity from low to high output at high temperatures, and reduces the unevenness of beam divergence. FEATURES High optical output power P = 175 mW CW o Peak wavelength = 405 nm TYP. p Single transverse mode (lateral) Wide operating temperature range T = 5 to +85C C 5.6 mm CAN package APPLICATIONS Blue-violet laser light source The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. R08DS0070EJ0100 Rev.1.00 Page 1 of 7 Jun 20, 2013 A Business Partner of Renesas Electronics Corporation. NV4V31SF <R> PACKAGE DIMENSIONS (UNIT: mm) X 902 CAP GLASS Y 0.40.1 5.60.1 4.5 MAX. LD CHIP 3.550.1 Z 0.5 MIN. STEM REFERENCE PLAIN 3 0.450.1 P.C.D. 2.00.2 1 1 3 LD 3 (Stem GND) 2 2 PIN CONNECTIONS BOTTOM VIEW Remark Cap glass thickness : 0.250.03 mm Cap glass refractive index : 1.53 ( = 405 nm) R08DS0070EJ0100 Rev.1.00 Page 2 of 7 Jun 20, 2013 2.30.3 1.20.1 6.50.5 1.00.15 1.30.08 0.40.1 1.60.2

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