3 V, SUPER MINIMOLD UPC2747TB 900 MHz Si MMIC AMPLIFIER UPC2748TB FEATURES GAIN vs. FREQUENCY HIGH DENSITY SURFACE MOUNTING: VCC = 3.0 V 20 6 pin super minimold or SOT-363 package UPC2747TB UPC2748TB GAIN: 18 UPC2747TB: Gs = 12 dB TYP 16 UPC2748TB: Gs = 19 dB TYP NOISE FIGURE: GS 14 UPC2747TB: NF = 3.3 dB TYP 12 UPC2748TB: NF = 2.8 dB TYP GS SUPPLY VOLTAGE: 10 VCC = 2.7 to 3.3 V 8 DESCRIPTION 6 NEC s UPC2747TB and UPC2748TB are Silicon RFIC s which are manufactured using the NESAT III process. These devices 0 are suitable as buffer amplifiers for cellular radio and other 0 1000 2000 communication receivers. The UPC2747TB/48TB are pin com- Frequency, f (MHz) patible and have comparable performance as the larger UPC2747T/48T, so they are suitable for use as a replacement to help reduce system size. The IC s are housed in a 6 pin super minimold or SOT-363 package. NEC s stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25C, ZL = ZS = 50 ) PART NUMBER UPC2747TB UPC2748TB PACKAGE OUTLINE SO6 SO6 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ICC Circuit Current (no signal)VCC = 3.0 V mA 3.8 5.0 7.0 4.5 6.0 8.0 VCC = 1.8 V mA 3.0 3.5 GS Small Signal Gain, f = 900 MHz, VCC = 3.0 V dB 9 12 14 16 19 21 f = 900 MHz, VCC = 1.8 V dB 5.5 11.5 1 fL Lower Limit Operating Frequency, VCC = 3.0 V GHz 0.2 0.4 VCC = 1.8 V GHz 0.2 2 fU Upper Limit Operating Frequency, VCC = 3.0 V GHz 1.5 1.8 1.2 1.5 VCC = 1.8 V GHz 1.8 1.5 PSAT Saturated Output Power, f = 900 MHz, VCC = 3.0 V dBm -9.5 -7 -6 -3.5 f = 900 MHz, VCC = 1.8 V dBm -14 -10 NF Noise Figure, f = 900 MHz, VCC = 3.0 V dB 3.3 4.5 2.8 4.0 f = 900 MHz, VCC = 1.8 V dB 5.2 4.5 RLIN Input Return Loss, f = 900 MHz, VCC = 3.0 V dB 11 14 8.5 11.5 f = 900 MHz, VCC = 1.8 V dB 11 10 RLOUT Output Return Loss, f = 900 MHz, VCC = 3.0 V dB 7 10 5.5 8.5 f = 900 mHz, VCC = 1.8 V dB 13 12 ISOL Isolation, f = 900 MHz, VCC = 3.0 V dB 35 40 35 40 f = 900 MHz, VCC = 1.8 V dB 34 34 OIP3 SSB Output Third Order Intercept, POUT = -20 dBm f1 = 900 MHz, f2 = 902 MHz, VCC = 3.0 V dBm -3 -1 f1 = 900 MHz, f2 = 902 MHz, VCC = 1.8 V dBm -10 -6 RTH (J-A) Thermal Resistance (Junction to Ambient) Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB C/W 325 325 Note: 1.The gain at fL is 3 dB down from the gain at 900 MHz. 2.The gain at fU is 3 dB down from the gain at 900 MHz. California Eastern Laboratories Gain, GS (dB)UPC2747TB, UPC2748TB 1 RECOMMENDED ABSOLUTE MAXIMUM RATINGS (TA = 25C) OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS RATINGS SYMBOLS PARAMETERS UNITS MIN TYP MAX VCC Supply Voltage V 4.0 VCC Supply Voltage V 2.7 3 3.3 ICC Total Supply Current mA 15 TOP Operating Temperature C -40 25 85 PIN Input Power dBm 0 2 PT Total Power Dissipation mW 200 TOP Operating Temperature C -40 to +85 TEST CIRCUIT TSTG Storage Temperature C -55 to +150 VCC Notes: 1. Operation in excess of any one of these parameters may result in 1000 pF permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = 85C). C3 6 C1 C2 50 50 4 1 IN OUT 1000 pF 1000 pF 2, 3, 5 TYPICAL PERFORMANCE CURVES (TA = 25C) CURRENT vs. OPERATING CURRENT vs. SUPPLY VOLTAGE TEMPERATURE 10 10 8 8 VCC = 3.3 V 6 6 VCC = 3.0 V 4 4 1.8 V 1.8 V 2 2 UPC2747TB UPC2747TB UPC2748TB UPC2748TB 0 0 -60 -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 Supply Voltage, VCC (V) Operating Temperature TOP (C) UPC2747TB UPC2747TB GAIN vs. FREQUENCY GAIN AND NOISE FIGURE AND TEMPERATURE vs. FREQUENCY 14 15 -40C VCC = 3.3 V +25C 3.0 V 12 10 2.7 V +85C 1.8 V 10 5 5 VCC = 3.3 V 8 4 0 3.0 V Vcc = 3.0 V 3 Icc = 5 mA 2.7 V -5 2 0.01 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 0 1000 2000 Frequency, f (MHz) Frequency, f (MHz) Gain, GS (dB) Circuit Current, ICC (mA) Gain, GS (dB) Circuit Current, ICC (mA) Noise Figure, NF (dB)