BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3215TB 5V, SUPER MINIMOLD SI MMIC WIDEBAND AMPLIFIER INSERTION POWER GAIN FEATURES vs. FREQUENCY 25 WIDEBAND RESPONSE: fu = 2.9 GHz TYP at 3dB bandwidth 20 NOISE FIGURE: NF = 2.3 dB TYP at f = 1.5 GHz 15 POWER GAIN: GP = 20.5 dB TYP at f = 1.5 GHz 10 SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V 5 HIGH DENSITY SURFACE MOUNTING: PIN = -30 dBm VCC = 5.0 V 6-pin super mini-mold package 0 0.1 0.3 1.0 3.0 Frequency, f (GHz) DESCRIPTION The UPC3215TB is a Silicon Monolithic IC designed as a APPLICATIONS wideband amplifier. The UPC3215TB is suitable for systems Systems requiring wideband operation from HF to L band. requiring wideband operation from HF to L band. DBS receivers and tuners This IC is manufactured using a 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. The pack- age is 6-pin super minimold suitable for surface mount. The UPC3215TB is manufactured according to stringent quality assurance standards to ensure highest reliability and consistent superior performance. ELECTRICAL CHARACTERISTICS (TA = 25C, VCC = 5.0 V, ZS = ZL = 50 ) PART NUMBER UPC3215TB PACKAGE OUTLINE S06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no signal) mA 10.5 14.0 17.5 GP Power Gain, f = 1.5 GHz, PIN = -30 dBm dB 18.5 20.5 - NF Noise Figure, f = 1.5 GHz dB - 2.3 3.0 fu Upper Limit Operating Frequency (The gain at fu is 3 dB down from the gain at 100 MHz) GHz 2.5 2.9 - ISOL Isolation, f = 1.5 GHz dB 39 44 - RLIN Input Return Loss, f = 1.5 GHz dB 10 15 - RLOUT Output Return Loss, f = 1.5 GHz dB 6.5 9.5 - P1dB 1 dB Compression Point, f = 1.5 GHz dBm -4 -1.5 - ELECTRICAL CHARACTERISTICS (TA = 25C, VCC = 5.0 V, ZS = ZL = 50 ) PART NUMBER UPC3215TB PACKAGE OUTLINE S06 SYMBOLS STANDARD CHARACTERISTICS REFERENCE VALUES PSAT Saturated Output Power, PIN = 0 dBm dBm +3.5 OIP3 Output Intercept Point f1 = 1.5 GHz, f2 = 1.501 GHz dBm +10 GP Gain Flatness, f = 0.1 to 2.15 GHz dB 1.0 DISCONTINUED Gain, GS (dB)UPC3215TB 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) TEST CIRCUIT SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V 6.0 VCC ICC Total Supply Current mA 30 1000 pF PIN Input Power dBm +10 2 PT Total Power Dissipation mW 270 C3 TOP Operating Temperature C -40 to +85 TSTG Storage Temperature C -55 to +150 6 Notes: C2 50 C1 50 1. Operation in excess of any one of these parameters may result 1 4 IN OUT in permanent damage. 1000 pF 1000 pF 2. Mounted on a 50 X 50 X 1.6 mm epoxy glass PWB, with copper patterning on both sides. (TA = 85C). 2,3,5 RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX VCC Supply Voltage V 4.5 5.0 5.5 TA Operating Ambient C -40 +25 +85 Temperature PIN Input Power dBm 0 fIN Input Frequency GHz 2.9 TYPICAL PERFORMANCE CURVES (TA = 25C) CIRCUIT CURRENT vs. CIRCUIT CURRENT vs. VOLTAGE OPERATING AMBIENT TEMPERATURE 20 20 No input signal No input signal VCC = 5 V 15 15 10 10 5 5 TA = -40C TA = +25C TA = +85C 0 0 0 1 2 3 4 5 6 -50 -25 0 +25 +50 +75 +100 Supply Voltage, VCC (V) Operating Ambient Temperature (C) INSERTION POWER GAIN vs. INSERTION POWER GAIN FREQUENCY vs. FREQUENCY 25 25 20 20 15 15 10 10 PIN = -30 dBm VCC = 5.0 V 5 5 VCC = 4.5 V PIN = -30 dBm TA = -40C VCC = 5.0 V TA = +25C TA = +85C VCC = 5.5 V 0 0 0.1 0.3 1.0 3.0 0.1 0.3 1.0 3.0 Frequency, f (GHz) Frequency, f (GHz) DISCONTINUED Gain, GS (dB) Circuit Current, ICC (mA) Noise Figure, NF (dB) Insertion Power Gain, GP (dB) Circuit Current, ICC (mA)