NEC s 1.5W UPG2118K GaAs MMIC POWER AMPLIFIER FEATURES DESCRIPTION E-MODE HJ-FET TECHNOLOGY NEC s UPG2118K is a 1.5W, 3 stage power amplier SINGLE +3.2V POWER SUPPLY developed primarily for DCS/PCS1800 applications. HIGH EFFICIENCY: PAE = 42% MIN With modied external matching the UPG2118K can HIGH SATURATED POWER: Pout = +31.5 dBm MIN be tuned from 800 to 2500 MHz. FLEXIBLE FREQUENCY RANGE 20-PIN QFN PACKAGE: Use of E-mode FET technology delivers high efciency (4.15 X 4.15 X 0.9 mm) and high linearity with a single positive low voltage supply. APPLICATIONS 1800 MHz DCS/PCS 915 AND 2450 ISM BAND USAGE AUTOMATIC METER READERS WIRELESS SECURITY SATELLITE UPLINK ORDERING INFORMATION PART NUMBER MARKING PACKAGE SUPPLYING FORM Embossed tape 12mm wide UPG2118K-E3-A 2118 20-pin QFN 4.5 K pcs/reel ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specied) PARAMETERS SYMBOL RATINGS UNIT Storage Temperature Tstg 45 to +85 C Operating Temperature Topt C 45 to +85 Supply Voltage1,2,3 V 1,2,3 8.0 V D Active Bias Circuit Voltage V 8.0 V ABC Reference Voltage V 5.0 V ref Junction Temperature Tj 150 C Input Power P 15 dBm in Total Power Dissipation P 4.0 W tot Caution This device is ESD sensitive. Please take ESD precautions. The information contained in this document is being issued in advance of the production cycle for the device. The parameters for the device may change before nal production or NEC Corporation, at its own discretion, may withdraw the device prior to its production. California Eastern LaboratoriesUPG2118K PIN CONNECTIONS (Top View) PIN NO. CONNECTION PIN NO. CONNECTION 1 V 1,2 11 GND G 2 V 1,2 12 NC ref 3 V 13 NC ABC 4 V 3 14 GND ref 5 V 3 15 V 2 G D 6 GND 16 V 1 D 7 V 3/RF OUT 17 GND D 8 V 3/RF OUT 18 GND D 9 V 3/RF OUT 19 V D attn 10 V 3/RF OUT 20 RF IN D RECOMMENDED OPERATING CONDITIONS (TA = 25C) PARAMETERS SYMBOL MIN TYP MAX UNIT Supply Voltage V 1,2,3 +2.8 +3.2 +5.5 V D Reference Voltage V +0.04 - +1.8 V ref Active Bias Circuit Voltage V 0 2.6 5.5 V ABC Input Power P 5 - 10 dBm in ELECTRICAL CHARACTERISTICS (Unless otherwise specied, TA=+25C,f=1880MHz,V =+3.2V,V =+2.6V,V =V =1.8V, P =+5dBm) D ABC ref attn in CHARACTERISTICS SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Active Bias Circuit Current I P =+31.5dBm,V =Arbitrary - - 30 mA ABC out ABC Reference Current I V =V =0.04 to 1.8V - - 10 mA ref ref attn V =V =0.04 V ref attn RF Leakage Current I - - 50 mA leak V =10K ohm+Load ABC Output Power P +31.5 - - dBm out Power Added Efciency PAE 42.0 - - % V =V =0.04 V to 1.8V ref attn Vrms/ Power Control Slope P - - 50:1 slope Vref V =0.01V ref Minimum Output Power M V =V =0.04 V - - -20 dBc Pout ref attn