X-On Electronics has gained recognition as a prominent supplier of UPG2250T5N-E2-A RF Amplifier across the USA, India, Europe, Australia, and various other global locations. UPG2250T5N-E2-A RF Amplifier are a product manufactured by CEL. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

UPG2250T5N-E2-A CEL

UPG2250T5N-E2-A electronic component of CEL
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Part No.UPG2250T5N-E2-A
Manufacturer: CEL
Category: RF Amplifier
Description: RF Amplifier GaAs MMIC PA Bluetooth
Datasheet: UPG2250T5N-E2-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 1.4157 ea
Line Total: USD 4247.1 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 1
3000 : USD 1.4157

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Minimum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
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We are delighted to provide the UPG2250T5N-E2-A from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UPG2250T5N-E2-A and other electronic components in the RF Amplifier category and beyond.

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GaAs INTEGRATED CIRCUIT PG2250T5N TM 1.8 V, POWER AMPLIFIER FOR Bluetooth Class 1 DESCRIPTION The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) Supply voltage : VDD1, 2, 3 = 1.5 to 3.5 V (1.8 V TYP.) Control voltage : Vcont = 1.5 to 2.1 V (1.8 V TYP.) Circuit current : IDD = 100 mA TYP. VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pout = +19 dBm : IDD = 170 mA TYP. VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pout = +24 dBm Output power : Pout = +20.0 dBm TYP. VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = 5 dBm : Pout = +25.0 dBm TYP. VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pin = 5 dBm Gain control range : GCR = 60 dB TYP. VDD1, 2, 3 = 1.8 V, Vcont = 0 to 1.8 V, Pin = 5 dBm High efficiency : PAE = 55% TYP. VDD1, 2, 3 = 1.8 V, Vcont = 1.8 V, Pin = 5 dBm High-density surface mounting : 6-pin plastic TSON package (1.5 1.5 0.37 mm) APPLICATION Power Amplifier for Bluetooth Class 1 ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form PG2250T5N-E2 PG2250T5N-E2-A 6-pin plastic TSON G5C Embossed tape 8 mm wide (Pb-Free) Pin 1, 6 face the perforation side of the tape Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: PG2250T5N-A Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10639EJ03V0DS (3rd edition) Date Published February 2008 NS The mark <R> shows major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind what field. Not Recommended For New DesignPG2250T5N PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1 OUTPUT/VDD3 2 N.C. 3 Vcont 4 INPUT 5 VDD1 6 VDD2 Remark Exposed pad : GND ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VDD1, 2, 3 5.0 V Control Voltage Vcont 2.4 V Circuit Current IDD 250 mA Control Current Icont 5 mA Input Power Pin +5 dBm Note Power Dissipation PD 400 mW Operating Ambient Temperature TA 40 to +85 C Storage Temperature Tstg 55 to +150 C Note Mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass PWB, TA = +85C RECOMMENDED OPERATING RANGE (TA = +25C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Operating Frequency fopt 2 400 2 450 2 500 MHz Supply Voltage VDD1, 2, 3 1.5 1.8 3.5 V Control Voltage Vcont 1.5 1.8 2.1 V 2 Data Sheet PG10639EJ03V0DS Not Recommended For New Design

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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