X-On Electronics has gained recognition as a prominent supplier of UPG2251T6M-E2-A RF Amplifier across the USA, India, Europe, Australia, and various other global locations. UPG2251T6M-E2-A RF Amplifier are a product manufactured by CEL. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

UPG2251T6M-E2-A CEL

UPG2251T6M-E2-A electronic component of CEL
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Part No.UPG2251T6M-E2-A
Manufacturer: CEL
Category: RF Amplifier
Description: RF Amplifier IC Bluetooth 2.4GHz ~ 2.5GHz 12-TSQFN (2x2)
Datasheet: UPG2251T6M-E2-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.638 ea
Line Total: USD 1.64 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.638
10 : USD 1.3898
25 : USD 1.3028

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.177
9000 : USD 1.144

   
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We are delighted to provide the UPG2251T6M-E2-A from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UPG2251T6M-E2-A and other electronic components in the RF Amplifier category and beyond.

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GaAs INTEGRATED CIRCUIT PG2251T6M TM +25 dBm MATCHED POWER AMPLIFIER FOR Bluetooth Class 1 DESCRIPTION The PG2251T6M is a fully matched, +25 dBm GaAs MMIC power amplifier for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power. This device is housed in a 12-pin plastic TSQFN (Thin Small Quad Flat Non-leaded) (T6M) package, and is suitable for high-density surface mounting. FEATURES Operating frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) Supply voltage : VDD1, 2, 3 = 2.5 to 3.5 V (3.0 V TYP.) Control voltage : Vcont = 1.5 to 2.1 V (1.8 V TYP.) Circuit current : IDD = 230 mA TYP. VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pout = +25 dBm Output power : Pout = +25.0 dBm TYP. VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pin = 5 dBm Gain control range : GCR = 70 dB TYP. VDD1, 2, 3 = 3.0 V, Vcont = 0 to 1.8 V, Pin = 5 dBm High efficiency : PAE = 47% TYP. VDD1, 2, 3 = 3.0 V, Vcont = 1.8 V, Pin = 5 dBm High-density surface mounting : 12-pin plastic TSQFN (T6M) package (2.0 2.0 0.37 mm) APPLICATIONS TM Power Amplifier for Bluetooth Class 1, ZigBee etc. ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form PG2251T6M-E2 PG2251T6M-E2-A 12-pin plastic TSQFN 2251 Embossed tape 8 mm wide (T6M) (Pb-Free) Pin 10, 11, 12 face the perforation side of the tape Qty 3 kpcs/reel Remark: To order evaluation samples, please contact your nearby sales office. Part number for sample order: PG2251T6M-A Caution: Observe precautions when handling, because these devices are sensitive to electrostatic discharge. Document No. PG10783EJ01V0DS (1st edition) Date Published October 2009 NS 2251 PG2251T6M PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM Pin No. Pin Name 1 Vcont 2 GND (Top View) (Top View) (Bottom View) 3 GND 12 11 10 12 11 10 10 11 12 4 Pin M/N 5 VDD1 1 9 1 9 9 1 6 VDD2 2 8 2 8 8 2 7 GND 3 7 3 7 7 3 8 GND M/N 9 GND 4 5 6 4 5 6 6 5 4 10 Pout 11 VDD3 12 VDD3 Remark Exposed pad : GND ABSOLUTE MAXIMUM RATINGS (TA = +25 C, unless otherwise specified) Parameter Symbol Ratings Unit Supply Voltage VDD1, 2, 3 6.0 V Control Voltage Vcont 3.0 V Circuit Current IDD 300 mA Control Current Icont 0.5 mA Input Power Pin +10 dBm Note Power Dissipation PD 600 mW Operating Ambient Temperature TA 40 to +85 C Storage Temperature Tstg 55 to +150 C Note Mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass PWB, TA = +85C RECOMMENDED OPERATING RANGE (TA = +25 C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Operating Frequency fopt 2 400 2 450 2 500 MHz Supply Voltage VDD1, 2, 3 2.5 3.0 3.5 V Control Voltage Vcont 1.5 1.8 2.1 V 2 Data Sheet PG10783EJ01V0DS Bias Circuit

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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