JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 BAT54WS Schottky Barrier Diode FEATURES z Extremely Fast Switching Speed z Low Forward Voltage MARKING: L9 Maximum Ratings Ta=25 Parameter Symbol Limit Unit 30 Non-Repetitive Peak Reverse Voltage V V RM 21 DC Blocking Voltage V V R 100 I mA Average Rectified Output Current O 200 I mA Forward Continuous Current F 300 Repetitive Peak Forward Current I mA FRM 600 Forward Surge Current I mA FSM 200 Power Dissipation PD mW 500 Thermal Resistance Junction to Ambient R JA /W 125 Junction Temperature T J -55~+150 Storage Temperature Range T STG Electrical Characteristics Ta=25 Parameter Conditions Symbol Min Typ Max Unit 30 Reverse breakdown voltage V I =100A V (BR) R V I =0.1mA 240 mV F1 F 320 V I=1.0mA mV F2 F Forward voltage V I=10mA mV F3 F 400 V I=30mA mV F4 F 500 V I=100mA mV F5 F 1000 2.0 I V=25V uA Reverse current R R I =10mA, I =10mA to 1mA , F R Reverse recovery time t 5.0 ns rr R =100 L V =1V,f=1MHz R 10 Capacitance between terminals C pF T C,Feb,2014Typical Characteristics BAT54WS Reverse Characteristics Forward Characteristics 100 200 Pulsed Pulsed 100 T =100 10 a 10 1 1 T =25 a 0.1 0.1 0.01 0 200 400 600 800 0 5 10 15 20 25 30 FORWARD VOLTAGE V (mV) REVERSE VOLTAGE V (V) F R Capacitance Characteristics Power Derating Curve 20 250 T =25 a f=1MHz 16 200 12 150 8 100 4 50 0 0 0 5 10 15 20 0 25 50 75 100 125 AMBIENT TEMPERATURE T () REVERSE VOLTAGE V (V) a R C,Feb,2014 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (mW) R D