B16WS Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B16WS Schottky Barrier Diode SOD-323 FEATURES z Guard ring protection z Low forward voltage drop z For use in low voltage, high frequency inverters z High surge current capability Marking: SM MAXIMUM RATINGS( Ta=25 unless otherwise noted ) Symbol Value Unit Parameter Maximum recurrent peak reverse voltage 60 V RRM V V Maximum RMS voltage 42 RMS V Maximum DC blocking voltage 60 DC I Continuous forward current 1 F A I Non-repetitive Peak forward surge current t=8.3ms 10 FSM Total power dissipation 250 mW P tot 400 R Thermal resistance junction to ambient air /W JA T Junction temperature 125 J Tstg storage temperature -55~+150 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Maximum instantaneous forward voltage V I=1A 0.7 V F F Maximum DC reverse current at rated DC I V=60V 0.1 mA R R blocking voltage Total capacitance C V=4V,f=1MHz 120 pF tot R www.cj-elec.com 1 E,Mar,2015 Typical Characteristics Forward Characteristics Reverse Characteristics 1000 10000 1000 100 100 10 10 1 1 0.1 0.1 0.1 0 100 200 300 400 500 600 650 5 1015202530354045505560 REVERSE VOLTAGE V (V) FORWARD VOLTAGE V (mV) R F Capacitance Characteristics Power Derating Curve 150 300 T =25 a f=1MHz 250 100 200 150 50 100 50 0 0 02 46 8 10 0 25 50 75 100 125 REVERSE VOLTAGE V (V) R AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 E,Mar,2015 T =100 a T =25 a T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (mW) R D