B5817WS SJ Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 B5817WS-5819WS SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ B5818WS:SK B5819WS: SL Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Unit Parameter Symbol B5817WS B5818WS B5819WS Non-repetitive peak reverse voltage V V 20 30 40 RM V Peak repetitive peak reverse voltage RRM Working peak reverse voltage 20 30 40 V V RWM DC blocking voltage V R RMS reverse voltage V 14 21 28 V R(RMS) Average rectified output current I 1 A O Peak forward surge current t=8.3ms I 9 A FSM Repetitive peak forward current I 1.5 A FRM Power dissipation Pd 250 mW Thermal resistance junction to R 400 /W JA ambient Junction temperature TJ 125 Storage temperature -55~+150 T STG ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit I = 1mA R B5817WS 20 Reverse breakdown voltage V V (BR) B5818WS 30 B5819WS 40 V =20V B5817WS R Reverse voltage leakage current I V =30V B5818WS 1 mA R R V =40V B5819WS R B5817WS I =1A 0.45 F V I =3A 0.75 F B5818WS I =1A 0.55 F Forward voltage V V F I =3A 0.875 F B5819WS I =1A 0.6 F V I =3A 0.9 F Diode capacitance C V =4V, f=1MHz 120 pF D R C,Oct,2013B5819WS Typical Characteristics Reverse Characteristics Forward Characteristics 10 3 1 T =100 a 1 0.1 T =75 0.1 a 0.01 T =25 a 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 010 20 30 40 REVERSE VOLTAGE V (V) FORWARD VO LTAGE V (V) R F Capacitance Characteristics Power Derating Curve 160 300 T =25 a f=1MHz 140 250 120 200 100 80 150 60 100 40 50 20 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) a R C,Oct,2013 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (A) F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (mA) D R