BAS40WS 43 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAS40WS SCHOTTKY BARRIER DIODE SOD-323 FEATURES z Low Turn-on Voltage Designed for Surface Mount Application z z PN Junction Guard for Transient and ESD Protection z Fast Switching z Plastic Material UL Recognition Flammability Classification 94V-O MARKING: 43 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Unit Symbo Limit Peak Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 40 V RWM DC Blocking Voltage V R 200 Forward Continuous Current I mA F Non-repetitive Peak Forward 600 I mA FSM Surge Current ms t=8.3 200 Power Dissipation Pd mW 500 Thermal Resistance Junction to Ambient R /W JA Junction temperature T 125 J -55 ~ +150 Storage Temperature T STG Electrical Ratings Ta=25 Parameter Symbol Min TyConditp iMaonsx Unit 40 Reverse breakdown voltage V V I =10A (BR) R 0.38 V V I =1mA F1 F 0.5 Forward voltage V V I =10mA F2 F 1 V V I =40mA F3 F 200 Reverse current I 20 nA V =30V R R 5 Capacitance between terminals C 4 pF V =0V,f=1MHz T R I =I =10mA F R ns Reverse recovery time t 5 rr Irr=0.1XI ,R =100 R L www.cj-elec.com 1 D,Mar,2015Typical Characteristics Forward Characteristics Reverse Characteristics 100 10000 Ta=100 3000 1000 30 300 10 100 Ta=25 30 10 3 3 1 1 0.0 0.2 0.4 0.6 0.8 1.0 010 20 30 40 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Power Derating Curve Capacitance Characteristics 4 300 Ta=25 f=1MHz 250 3 200 2 150 100 1 50 0 0 0 5 10 15 20 0 25 50 75 100 125 150 REVERSE VOLT AGE V (V) AMBIENT TEMPERATURE Ta () R www.cj-elec.com 2 D,Mar,2015 Ta=100 Ta=25 FORWARD CURRENT I (mA) F CAPACITANCE BETWEEN TERMINALS C (pF) T REVERSE CURRENT I (nA) POWER DISSIPATION P (mW) R D