BAS70-05 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate D iodes SOT-23 BAS70/-04/-05/-06 SWITCHING DIODE FEATURES z Low turn-on voltage z Fast switching z Also available in lead free version BAS70 Marking: 73 BAS70-04 Marking: 74 BAS70-05 Marking: 75 BAS70-06 Marking: 76 MARKING: BAS70 BAS70-04 BAS70-05 BAS70-06 Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS T a=25 Value Unit Symbol Parameter 70 V V DC Voltage R 70 mA I Forward Continuous Current F I FSM Non-Repetitive Peak Forward Surge Current t = 8.3ms 100 mA 200 mW P Power Dissipation D /W RJA Thermal Resistance Junction to Ambient 500 125 T Junction Temperature J -55~+150 T Storage Temperature stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V I = 10A 70 V (BR) R Reverse voltage leakage current I V=50V 100 nA R R I =1mA 410 F Forward voltage mV V F I =15mA 1000 F Diode capacitance C V =0V f=1MHz 2 pF D R I =I =10mA,I =0.1xI , F R rr R Reveres recovery time t 5 ns rr R =100 L www.cj-elec.com 1 E,Oct,2015Typical Characteristics Forward Characteristics Reverse Characteristics 100 10 Pulsed Pulsed T =100 a 10 1 1 0.1 T =25 a 0.1 0.01 0.01 0.0 0.2 0.4 0.6 0.8 1.0 0 1020 3040 5060 70 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Power Derating Curve Capacitance Characteristics 3.0 300 T =25 a f=1MHz 2.5 250 2.0 200 1.5 150 1.0 100 0.5 50 0.0 0 0 5 10 15 20 0 25 50 75 100 125 AMBIENT TEMPERATURE T ( ) REVERSE VOLTAGE V (V) a R www.cj-elec.comwww.cj-elec.com 2 E,Oct,2015 T =100 a T = 25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (mW) R D