JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 BAS70WS SCHOTTKY BARRIER DIODE FEATURES z Low Turn-on Voltage z Fast Switching z PN Junction Guard for Transient and ESD Protection z Designed for Surface Mount Application z Plastic Material UL Recognition Flammability Classification 94V-O MARKING: K73 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Symbolt Unit Limi Peak Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 70 V RWM DC Blocking Voltage V R 70 Forward Continuous Current I mA F Peak Forward Surge Current I FSM 100 mA 200 Power Dissipation PD mW 500 Thermal Resistance from Junction to Ambient R /W JA Junction temperature T 125 J -55 ~+150 Storage Temperature T STG Electrical Ratings Ta=25 Parameter Symbol Typ Max Unit Min Conditions 0.41 V V I =1mA F1 F Forward voltage 1 V V I =15mA F2 F 100 Reverse current I nA V =50V R R 2 Capacitance between terminals C pF V =0V,f=1MHz T R I =I =10mA F R t 5 ns Reverse recovery time rr Irr=0.1XI ,R =100 R L www.cj-elec.com 1 F,Mar,2015 W PV 1RQ UHSHWLWLYH Typical Characteristics Forward Characteristics Reverse Characteristics 100 20 Pulsed Pulsed 10 10 T =100 a 3 1 1 0.1 T =25 a 0.3 0.01 0.1 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Power Derating Curve Capacitance Characteristics 2.8 250 T =25 a f=1MHz 2.4 200 2.0 150 1.6 1.2 100 0.8 50 0.4 0.0 0 0 5 10 15 20 0 25 50 75 100 125 REVERSE VOLT AGE V (V) AMBIENT TEMPERATURE T ( ) R a www.cj-elec.com 2 F,Mar,2015 T =25 a T =100 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (uA) D R