BAT43WS S8 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 BAT42WS/BAT43WS SCHOTTKY BARRIER DIODE FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Limit Unit Symbol Peak Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 30 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 21 V R(RMS) Forward Continuous Current I 200 mA FM Repetitive Peak Forward Current t<1.0s I 500 mA FRM Peak Forward Surge Current t<10ms I 4.0 A FSM Power Dissipation Pd 200 mW Thermal Resistance Junction to Ambient R 500 /W JA Junction temperature T 125 J T -55~+150 Storage Temperature STG Electrical Ratings Ta=25 Parameter Symbol Min TypConditMaxionsUnit Reverse breakdown voltage V 30 V I =10A (BR) R V 1.0 V I =200mA Both Types F F V 0.4 V I =10mA BAT42WS F F Forward voltage BAT42WS V 0.65 V I =50mA F F BAT43WS V 0.26 0.33 V I =2mA F F BAT43WS V 0.45 V I =15mA F F Reverse current I 0.5 A V =25V R R Capacitance between terminals C 10 pF V =1.0V,f=1.0MHz T R I =I =10mA F R Reverse recovery time t 5 ns rr Irr=0.1XI ,R =100 R L C,Jul,2012BAT43WS Typical Characteristics Reverse Characteristics Forward Characteristics 100 200 100 T =100 10 a 10 1 1 0.1 T =25 a 0.1 0.01 0 100 200 300 400 500 600 700 010 20 30 REVERSE VOLTAGE V (V) FORWARD VOLT AGE V (mV) R F Capacitance Characteristics Power Derating Curve 20 250 T =25 a f=1MHz 200 15 150 10 100 5 50 0 0 0 5 10 15 20 0 25 50 75 100 125 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) a R CJul,2012 T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (uA) D R