BZT52B10S Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 BZT52B2V4S-BZT52B39S ZENER DIODE FEAT URE z Planar Die Construction z General Purpose, Medium Current z Ideally Suited for Automated Assembly Processes z Available in Lead Free Version Maximum Ratings (T a=25 unless otherwise specified ) Characteristic Symbol Value Unit Forward Voltage (Note 2) IF = 10mA V 0.9 V F Power Dissipation(Note 1) P 200 mW d Thermal Resistance from Junction to Ambient R 625 W JA Junction Temperature T 150 j Storage Temperature Range T -55 ~ +150 stg www.cj-elec.com 1 E,Mar,2015 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Typical Maximum Test Maximum Zener Impedance Temperature Zener Voltage Range (Note 2) Reverse Current Type Type (Note 3) Coefficent Current I ZTC I Number Code ZTC V I I Z I Z I I I V mV/C Z ZT ZT ZT ZT ZK ZK ZK R R mA Nom(V) Min(V) Max(V) mA AV Min MaxmA BZT52B2V4S 2WX 2.4 2.35 2.45 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52B2V7S 2W1 2.7 2.65 2.75 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52B3V0S 2W2 3.0 2.94 3.06 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52B3V3S 2W3 3.3 3.23 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52B3V6S 2W4 3.6 3.53 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52B3V9S 2W5 3.9 3.82 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V3S 2W6 4.3 4.21 4.39 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V7S 2W7 4.7 4.61 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52B5V1S 2W8 5.1 5.00 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52B5V6S 2W9 5.6 5.49 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52B6V2S 2WA 6.2 6.08 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52B6V8S 2WB 6.8 6.66 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52B7V5S 2WC 7.5 7.35 7.65 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52B8V2S 2WD 8.2 8.04 8.36 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52B9V1S 2WE 9.1 8.92 9.28 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52B10S 2WF 10 9.80 10.20 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52B11S 2WG 11 10.78 11.22 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52B12S 2WH 12 11.76 12.24 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52B13S 2WI 13 12.74 13.26 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52B15S 2WJ 15 14.70 15.30 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52B16S 2WK 16 15.68 16.32 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52B18S 2WL 18 17.64 18.36 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52B20S 2WM 20 19.60 20.40 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52B22S 2WN 22 21.56 22.44 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52B24S 2WO 24 23.52 24.48 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52B27S 2WP 27 26.46 27.54 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52B30S 2WQ 30 29.40 30.60 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52B33S 2WR 33 32.34 33.66 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52B36S 2WS 36 35.28 36.72 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52B39S 2WT 39 38.22 39.78 2 130 350 0.5 0.1 27.3 33.4 41.2 2 2 . Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. www.cj-elec.com 2 E,Mar,2015