BZT52C9V1S Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 BZT52C2V4S-BZT52C39S ZENER DIODE FEATURES z Planar die construction z 200mW power dissipation on ceramic PBC z General purpose, medium current z Ideally suited for automated assembly processes z Available in lead free version Maximum Ratings (Ta=25 unless otherwise specified ) Characteristic Symbol Value Unit Forward Voltage (Note 2) I = 10mA V 0.9 V F F Power Dissipation(Note 1) P 200 mW D Thermal Resistance Junction to Ambient R 625 /W JA Temperature T 150 j T Storage Temperature Range -5 ~+150 D,Jan,2014 VWJ -XQFWLRQ IURP Electrical Characteristics(Ta = 25 unless otherwise specified ) Maximum Typical Test Maximum Zener Impedance Reverse Temperature Zener Voltage Range (Note 2) Current (Note 3) Current Coefficient TYPE Marking I ZTC (Note 2) I mV/ ZTC V I I Z I Z I I I V Z ZT ZT ZT ZT ZK ZK ZK R R Nom(V) Min(V) Max(V) (mA) (mA) A V Min Max mA BZT52C2V4S WX 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7S W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0S W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3S W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6S W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9S W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3S W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7S W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1S W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2 2.5 5 BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8S WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5S WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2S WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1S WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10S WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11S WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12S WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13S WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15S WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13 5 BZT52C16S WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14 5 BZT52C18S WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16 5 BZT52C20S WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22S WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24S WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27S WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30S WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33S WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36S WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 2 . Notes:1. Device mounted on ceramic PCB 7. 6mm x 9.4mm x 0.87mm with pad areas 25mm 2. Short duration test pulse used to minimize self-heating effect. 3. f = 1kHz. D,Jan,2014