X-On Electronics has gained recognition as a prominent supplier of CJ2306 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJ2306 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJ2306 Changjing Electronics Technology

CJ2306 electronic component of Changjing Electronics Technology
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Part No.CJ2306
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Trench 30V 3.16A 3V @ 250uA 47 mΩ @ 3.5A,10V SOT-23 (SOT-23-3) RoHS
Datasheet: CJ2306 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0421 ea
Line Total: USD 0.84 
Availability - 1987
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
1987
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 20
Multiples : 20
20 : USD 0.0421
200 : USD 0.0346
600 : USD 0.0309
3000 : USD 0.0255
9000 : USD 0.0232
21000 : USD 0.0221

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CJ2306 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJ2306 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS SOT-23 CJ2306 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET 1. GATE 2. SOURCE APPLICATIONS 3. DRAIN z Load Switch for Portable Devices z DC/DC Converter MARKING: S6 Maximum ratings (at T =25 unless otherwise noted) A Parameter Symbol Value Unit Drain-Source voltage V 30 DS V Gate-Source Voltage V 20 GS a,b Continuous Drain Current (T =150) I 3.16 J D A Pulsed Drain Current I 20 DM a,b Continuous Source Current(Diode Conduction) I 0.62 S a,b Maximum Power Dissipation P 0.75 W D Thermal Resistance from Junction to Ambient (t5s) R 100 /W JA Operating Junction and Storage Temperature Range T T -55 to150 J, stg Notes : a. Surface Mounted on 1 1 FR4 board, t 5s. b. Pulse width limited by maximum junction temperature. A,May,2012 Electrical characteristics (at T =25 unless otherwise noted) A Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V VGS = 0V, ID =250A 30 (BR) DS V Gate-Threshold Voltage VGS(th) VDS =V , ID =250A 1.0 3.0 GS Gate-Body Leakage I VDS =0V, VGS =20V 100 nA GSS 0.5 Zero Gate Voltage Drain Current I VDS =30V, VGS =0V A DSS VGS =10V, ID =3.5A 0.038 0.047 a Drain-Source On-Resistance RDS(on) VGS =4.5V, ID =2.8A 0.052 0.065 a Forward Transconductance gfs VDS =4.5V, ID =2.5A 7.0 S Diode Forward Voltage V I =1.25A,V =0V 0.8 1.2 V SD S GS Dynamic Gate Charge Q VDS =15V,VGS =5V,ID =2.5A 3.0 4.5 g Total Gate Charge Q 6 9 gt nC Gate-Source Charge Q VDS =15V,VGS =10V,ID =2.5A 1.6 gs Gate-Drain Charge Q 0.6 gd Gate Resistance R f =1.0MHz 2.5 5 7.5 g Input Capacitance C 305 iss Output Capacitance C VDS =15V,VGS =0V,f =1MHz 65 pF oss Reverse Transfer Capacitance C 29 rss Switching Turn-On Delay Time td(on) 7 11 V =15V, DD Rise Time tr 12 18 R =15, ID 1A, ns L Turn-Off Delay Time td(off) 14 25 V =10V,Rg=6 GEN Fall Time tf 6 10 Notes : a.Pulse Test : Pulse Width300s, duty cycle 2%. A,May,2012

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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