JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Thyristors TO-92 MAC97A6,A8 TRIAC 1. ANODE MAIN FEATURES 2. GATE Symbol value unit 3. ANODE I 1 A T(RMS) V /V MAC97A6 400 V DRM RRM MAC97A8 600 V I 8 A TSM DESCRIPTION Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. FEATURES z Blocking voltage to 400 V (MAC97A6) z RMS on-state current to 0.6 A z General purpose bidirectional switching APPLICATIONS z General purpose bidirectional switching z Phase control applications z Solid state relays Limiting values Symbol Parameter Conditions Value Unit V /VRRM T = 25 to125 DRM j 400 repetitive peak off-state voltage MAC97A6 V T = 25 to125 j MAC97A8 600 gate current(peak value) t = 2s max 1 A I GM V gate voltage(peak value) t = 2s max 5 V GM gate power(peak value) t = 2s max 5 W P GM Junction Temperature - -40 ~ 125 Tj T Storage Temperature - -40 ~ 150 stg www.cj-elec.com 1 E,Aug,2016 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit I =10A MAC97A6 400 D Rated repetitive peak off-state/reverse voltage V V V DRM, RRM MAC97A8 600 Rated repetitive peak off-state current I V =V 10 A DRM D DRM On-state voltage V I =1A,I =50mA 1.9 V TM T G I T (+), G(+) 5 mA 2 II T (+), G(-) V =12V 5 mA 2 D Gate trigger current I GT III T (-), G(-) R =100 5 mA 2 L IV T (-), G(+) - mA 2 I T (+), G(+) 1.5 V 2 II T (+), G(-) V =12V 1.5 V 2 D Gate trigger voltage V GT III T (-), G(-) R =100 1.5 V L 2 IV T (-), G(+) - V 2 Holding current I I =600mA ,I =20mA 10 mA H T G www.cj-elec.com 2 E,Aug,2016