MBR20200FCT Changjing Electronics Technology

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes MBR20100FCT, 150FCT, 200FCT TO-220F SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES 2. CATHODE z Schottky Barrier Chip 3. ANODE z Guard Ring Die Construction for Transient Protection 1 2 3 z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Value Unit Symbol Parameter MBR20100FCT MBR20150FCT MBR20200FCT V Peak repetitive reverse voltage RRM V Working peak reverse voltage 100 150 200 V RWM DC blocking voltage V R V RMS reverse voltage 70 105 140 V R(RMS) I Average rectified output current 20 A O Non-Repetitive peak forward surge current I 150 A FSM 8.3ms half sine wave Power dissipation 2 W P D R Thermal resistance from junction to ambient 50 /W JA T Junction temperature 125 j T Storage temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Device Test conditionsMin Typ Max Unit MBR20100FCT 100 Reverse voltage V I =1mA V (BR)MBR20150FCT 150R MBR20200FCT 200 MBR20100FCT V=100V 0.1 R Reverse current I MBR20150FCT V=150V 0.1 mA R R MBR20200FCT V=200V 0.1 R MBR20100FCT 1 V MBR20150FCT I =10A 1 V F1 F MBR20200FCT 1 Forward voltage MBR20100FCT 1.2 V * MBR20150FCT I =20A 1.2 V F2 F MBR20200FCT 1.2 *Pulst test www.jscj-elec.com Rev. - 2.0 1Typical Characteristics Forward Characteristics Reverse Characteristics 1000 20000 10000 100 1000 10 100 1 10 1 0.1 1 0 100 200 300 400 500 600 700 800 900 1000 20 40 60 80 100 REVERSE VOLTAGE V (V) FORWARD VOLTAGE V (mV) R F Capacitance Characteristics Power Derating Curve 400 2.5 T =25 a f=1MHz 2.0 300 1.5 200 1.0 100 0.5 0 0.0 0 5 10 15 20 25 30 35 0 25 50 75 100 125 REVERSE VOLTAGE V (V) R AMBIENT TEMPERATURE T ( ) a www.jscj-elec.com Rev. - 2.0 2 T =100 a T =25 a T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (W) R D