RB551V-40 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 RB551V-40 Schottky Barrier Diode FEATURES z Small Surface Mounting Type z Low V F z High Reliability APPLICATIONS z High-Frequency Rectification Switching Regulators MARKING: D4 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. MAXIMUM RATINGS (T =25 unless otherwise noted ) a Symbol Parameter Value Unit V Non-Repetitive Peak Reverse Voltage 40 V RM I Continuous Forward Current 500 mA O I Non-repetitive Forward Peak Surge Current t=8.3ms 2 A FSM P Power Dissipation 200 mW D R Thermal Resistance From Junction To Ambient 500 /W JA T Junction Temperature 125 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit 40 Reverse voltage V I0.1mA V (BR) R Reverse current I V40V 0.1 mA R R Forward voltage V I500mA 0.47 V F F www.cj-elec.com 1 F,Mar,2015 = = =Typical Characteristics Forward Characteristics Reverse Characteristics 500 1000 100 100 10 10 1 1 0.1 0.1 0.1 0 100 200 300 400 500 5 1015 2025303540 REVERSE VOLTAGE V (V) FORWARD VOLTAGE V (mV) R F Capacitance Characteristics Power Derating Curve 120 250 T =25 a f=1MHz 100 200 80 150 60 100 40 50 20 0 0 0 5 10 15 20 25 30 35 0 25 50 75 100 125 REVERSE VOLTAGE V (V) R AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 F,Mar,2015 T =100 a T =25 a T =100 a T =25 a CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (mW) R D