RB751V-40 5 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 RB751V-40 Schottky Barrier Diode FEATURES z Low current rectifier schottky diode z Low voltage, low inductance z For power supply MAKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Unit Symbol Limit Peak reverse voltage V 40 V RM V 30 V DC reverse voltage R Mean rectifying current I 0.03 A O Peak forward surge current I 0.2 A FSM Power dissipation P mW D 200 Thermal Resistance Junction to Ambient R /W JA 500 Junction temperature T 125 j Storage temperature T -55~+150 stg Electrical Ratings Ta=25 Parameter Symbol Min Typ Max Unit Conditions V 0.37 V I =1mA Forward voltage F F Reverse current I 0.5 A V =30V R R Capacitance between terminals C 2 pF =1V, f=1MV HZ T R ,Aug,2012&Typical Characteristics RB751V-40 Reverse Charact eristics Forward Characteristics 100 100 T =100 10 a 10 T =100 a 1 T =25 a 1 0.1 T =25 a 0.1 0.01 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Capacitance Ch aracteristics Power Derating Curve 4 250 T =25 a f=1MHz 200 3 150 2 100 1 50 0 0 0 5 10 15 20 0 25 50 75 100 125 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) R a C,Aug,2012 CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T REVERSE CURRENT I (uA) POWER DISSIPATION P (mW) R D