SBDD1045CT Changjing Electronics Technology

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO- 2 52 - 2 L Plastic-Encapsulate Diodes SBDD1045CT SCHOTTKY BARRIER RECTIFIER MAIN CHARACTERISTICS I 1025A O TO-252-2L V 45 V RRM T 150 j 1. ANODE V F(typ) 0.48V Tj=125 A 2. C THODE FEATURES 3. ANODE 2 Low Power Loss,High Efficiency 1 3 Guard Ring Die Construction for Transient Protection 1 High Current Capability and Low Forward Voltage Drop c a s e 2 MARKING 3 SBDD1045CT= Device code SBD Solid dot = Green molding compound device, D 1 0 4 5 C T if none, the normal device XXXX XXXX= Code 2 1 3 MAXIMUM RATINGS ( T =25 unless otherwise noted ) c Symbol Parameter Value Unit V Peak repetitive reverse voltage RRM V V Working peak reverse voltage 45 RWM V DC blocking voltage R V RMS reverse voltage 31.5 V R(RMS) I Average rectified output current 10 A O Non-Repetitive peak forward surge current (8.3ms half sine wave) I 120 FSM A R J C /W Thermal resistance from junction to case 5.0 R Thermal resistance from junction to ambient /W JA 100 T Junction temperature 150 j T Storage temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) c Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V I=0.1mA 45 V (BR) R X Tj =25 20 100 I Reverse current R V =45V R 20 mA Tj =125 V Tj =25 0.46 I=3A F Tj =125 V 0.40 Forward voltage V F V Tj =25 0.52 0.60 I=5A F Tj =125 V 0.48 *Pulse test: pulse width 300s, duty cycle 2.0%. www.jscj-elec.com 1 Rev. - 1.0 Typical Characteristics FIG.1: FORWARD CURRENT DERATING CURVE FIG.2: TYPICAL FORWARD CHARACTERISTICS 12 100 o T j = 25 C 10 10 o T j = 75 C 8 o 1.0 T j = 125 C 6 0.1 4 0.01 2 0 0.001 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 Tc ) VF(V) FIG.3: TOTAL CAPACITANCE DERATING CURVE FIG.4: TYPICAL REVERSE CHARACTERISTICS 800 10 0 f = 1 M H z o T j = 2 5 C 700 o T j = 125 C 600 10 500500 o T j = 75 C 4 00 1 .0 300 o T j = 25 C 0.1 200 100 0.01 0 40 0 10 20 30 50 0 2 4 6 8 10 VR(V) VR(V) www.jscj-elec.com 2 Rev. - 1.0 C (pF) TOT IF(A) IF(A)