SBDD1045LCT Changjing Electronics Technology

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO- 2 52 - 2 L Plastic-Encapsulate Diodes SBDD1045LCT SCHOTTKY BARRIER RECTIFIER MAIN CHARACTERISTICS I 1025A O TO-252-2L V 45 V RRM T 150 j 1. ANODE V F(typ) 0.39V Tj=125 A 2. C THODE FEATURES 3. ANODE 2 Low Power Loss,High Efficiency 1 3 Guard Ring Die Construction for Transient Protection 1 High Current Capability and Low Forward Voltage Drop case 2 MARKING 3 SBD SBDD1045LCT= Device code D1045LCT Solid dot = Green molding compound device XXXX if none, the normal device 2 XXXX= Code 1 3 MAXIMUM RATINGS ( T =25 unless otherwise noted ) c Symbol Parameter Value Unit V Peak repetitive reverse voltage RRM V V Working peak reverse voltage 45 RWM V DC blocking voltage R V RMS reverse voltage 31.5 V R(RMS) I Average rectified output current 10 A O Non-Repetitive peak forward surge current (8.3ms half sine wave) I FSM 120 A R /W J C 5.0 Thermal resistance from junction to case R Thermal resistance from junction to ambient /W JA 100 T Junction temperature 150 j T Storage temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) c Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V I1mA 45 V (BR) R X 50 500 T j =25 I Reverse current R V =45V R 50 mA T j =125 0.43 V T j =25 I=3A F T j =125 V 0.34 Forward voltage V F 0.47 V T j =25 0.55 I=5A F T j =125 0.39 V *Pulse test: pulse width 300s, duty cycle 2.0%. www.jscj-elec.com 1 Rev. - 1.0 = Typical Characteristics FIG.1: FORWARD CURRENT DERATING CURVE FIG.2: TYPICAL FORWARD CHARACTERISTICS 12 100 o T j = 25 C 10 10 o T j = 75 C 8 1.0 o T j = 125 C 6 0.1 4 0.01 2 0.001 0 0 25 50 75 100 125 150 0.0. 0.2 0.4 0.6 0.8 VF(V) Tc ) FIG.3: TOTAL CAPACITANCE DERATING CURVE FIG.4: TYPICAL REVERSE CHARACTERISTICS 1200 100 f = 1 M H z 1100 o o T j = 2 5 C T j = 125 C 1000 10 900 o 800 T j = 75 C 700 1.0 600 500 400 0.1 300 o T j = 25 C 200 100 0.01 0 0 10 30 0 2 4 6 8 10 20 40 50 VR(V) VR(V) www.jscj-elec.com 2 Rev. - 1.0 C (pF) TOT IF(A) IF(A)